Gate dielectric formation and MIS interface characterization on Ge

Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

Chi On Chui, Shriram Ramanathan, B. B. Triplett et al. · IEEE Electron Device Letters · 2002 · 334 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Hf O 2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

Martin M. Frank, G. D. Wilk, D. Starodub et al. · Applied Physics Letters · 2005 · 313 citations

Engineering, Electrical Engineering, Materials Science +17

Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces

K. Prabhakaran, Fumihiko Maeda, Yasushi Watanabe et al. · Applied Physics Letters · 2000 · 253 citations

Natural Sciences, Chemistry, Materials Science +17

Electrical characterization of germanium p-channel MOSFETs

Huiling Shang, H. Okorn-Schimdt, J. A. Ott et al. · IEEE Electron Device Letters · 2003 · 170 citations

Engineering, Electrical Engineering, Materials Science +15

Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

Hyoungsub Kim, Chi On Chui, Krishna C. Saraswat et al. · Applied Physics Letters · 2003 · 136 citations

Engineering, Materials Engineering, Materials Science +17