Y. Yamashita

Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

Y. Yamashita, Akira Endoh, K. Shinohara et al. · IEEE Electron Device Letters · 2002 · 289 citations

Wide-bandgap Semiconductor, Electrical Engineering, Millimeter Wave Technology +14

547-GHz<tex>$f_t$</tex>In<tex>$_0.7$</tex>Ga<tex>$_0.3$</tex>As–In<tex>$_0.52$</tex>Al<tex>$_0.48$</tex>As HEMTs With Reduced Source and Drain Resistance

K. Shinohara, Y. Yamashita, Akira Endoh et al. · IEEE Electron Device Letters · 2004 · 116 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +14

Gate dielectric formation and MIS interface characterization on Ge

Shinichi Takagi, Tatsuro Maeda, Noriyuki Taoka et al. · Microelectronic Engineering · 2007 · 105 citations

Electrical Engineering, Engineering, Bias Temperature Instability +3

Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

K. Shinohara, Y. Yamashita, Akira Endoh et al. · IEEE Electron Device Letters · 2001 · 82 citations

Developed Pseudomorphic Hemts, Electrical Engineering, F/sub T/ +12

Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency

Y. Yamashita, Akira Endoh, K. Shinohara et al. · IEEE Electron Device Letters · 2001 · 74 citations

Electrical Engineering, Ghz Cutoff Frequency, Engineering +11