Y. Yamashita - Concepedia

Author

Y. Yamashita

Fujitsu (Japan)

Also Known As

Y Yamashita, Y. Yamashita, Yuichi YAMASHITA, Yuichi Yamashita

Publications

Citations

H-Index

Concepts

All Affiliations

Fujitsu (Japan)The University of Osaka National Institute of Information and Communications Technology Rockwell Automation (United States)Ministry of Internal Affairs and Communications

About

Y. Yamashita is an author at Fujitsu (Japan) specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	17	893
2	Applied Physics	12	15	827
3	Natural Sciences	1	1	29
4	Biochemistry	1	1	29
5	Computer Engineering	1	1	30

Y. Yamashita

Publications

943

Citations

H-Index

Page 1

	Year	Citations
Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz Y. Yamashita, Akira Endoh, K. Shinohara, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringMillimeter Wave TechnologyEngineeringRf Semiconductor	2002	289
547-GHz&lt;tex&gt;$f_t$&lt;/tex&gt;In&lt;tex&gt;$_0.7$&lt;/tex&gt;Ga&lt;tex&gt;$_0.3$&lt;/tex&gt;As–In&lt;tex&gt;$_0.52$&lt;/tex&gt;Al&lt;tex&gt;$_0.48$&lt;/tex&gt;As HEMTs With Reduced Source and Drain Resistance K. Shinohara, Y. Yamashita, Akira Endoh, IEEE Electron Device Letters Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorPhysics	2004	116
Gate dielectric formation and MIS interface characterization on Ge Shinichi Takagi, Tatsuro Maeda, Noriyuki Taoka, Microelectronic Engineering Electrical EngineeringEngineeringBias Temperature InstabilityApplied PhysicsGate Dielectric Formation	2007	105
Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency K. Shinohara, Y. Yamashita, Akira Endoh, IEEE Electron Device Letters Developed Pseudomorphic HemtsElectrical EngineeringF/sub T/EngineeringPhysics	2001	82
Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency Y. Yamashita, Akira Endoh, K. Shinohara, IEEE Electron Device Letters Electrical EngineeringGhz Cutoff FrequencyEngineeringPhysicsHigh-frequency Device	2001	74
50-nm gate Schottky source/drain p-MOSFETs with a SiGe channel Keiji Ikeda, Y. Yamashita, Akira Endoh, IEEE Electron Device Letters Semiconductor TechnologyChannel DeviceElectrical EngineeringEngineeringNanoelectronics	2002	36
Three-dimensional routing for multilayer ceramic printed circuit boards Akihiko Hanafusa, Y. Yamashita, Makoto Yasuda 3D Ic ArchitectureNetwork Routing AlgorithmEngineeringMicrofabricationPattern Length	2002	30
Effect of chitin hydrolysate on the denaturation of lizard fish myofibrillar protein and the state of water during frozen storage Y. Yamashita, Najun Zhang, Y. Nozaki Food Hydrocolloids Aquatic Food SystemChitin HydrolysateBiochemistryNatural SciencesAquaculture	2003	29
Observation of Mobility Enhancement in Strained Si and SiGe Tri-Gate MOSFETs with Multi-Nanowire Channels Trimmed by Hydrogen Thermal Etching Tetsuo Tezuka, Eiji Toyoda, Shu Nakaharai, SemiconductorsSidewall ShapesElectrical EngineeringUnstrained Si NwEngineering	2007	27
Heteroepitaxial growth of rotated InSb films on a Si(111) substrate via 2×2-In surface reconstruction M. Mori, M. Saito, Y. Yamashita, Journal of Crystal Growth Materials ScienceEpitaxial GrowthEngineering2×2-In Surface ReconstructionSurface Science	2007	26

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