Noriyuki Taoka

High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation

Rui Zhang, Po-Chin Huang, Ju-Chin Lin et al. · IEEE Transactions on Electron Devices · 2013 · 200 citations

Materials Engineering, Materials Science, Electrical Engineering +13

High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

Rui Zhang, Takashi Iwasaki, Noriyuki Taoka et al. · IEEE Transactions on Electron Devices · 2011 · 175 citations

Gate Stack, Engineering, 1-Nm Eot +19

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Ryo Suzuki, Noriyuki Taoka, Masafumi Yokoyama et al. · Applied Physics Letters · 2012 · 162 citations

Materials Science, Electrical Engineering, Cycle Al2o3 Inter-layer +11

Al 2 O 3 / GeO x / Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

Rui Zhang, Tomohiro Iwasaki, Noriyuki Taoka et al. · Applied Physics Letters · 2011 · 159 citations

Materials Science, Oxide Heterostructures, Electrical Engineering +15

Gate dielectric formation and MIS interface characterization on Ge

Shinichi Takagi, Tatsuro Maeda, Noriyuki Taoka et al. · Microelectronic Engineering · 2007 · 105 citations

Electrical Engineering, Engineering, Bias Temperature Instability +3