Ju-Chin Lin

High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation

Rui Zhang, Po-Chin Huang, Ju-Chin Lin et al. · IEEE Transactions on Electron Devices · 2013 · 200 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Impact of Plasma Postoxidation Temperature on the Electrical Properties of ${\rm Al}_{2}{\rm O}_{3}/{\rm GeO}_{x}/{\rm Ge}$ pMOSFETs and nMOSFETs

Rui Zhang, Ju-Chin Lin, Xiao Yu et al. · IEEE Transactions on Electron Devices · 2014 · 35 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures

Rui Zhang, Po-Chin Huang, Ju-Chin Lin et al. · Applied Physics Letters · 2013 · 26 citations

Engineering, Oxidation Resistance, Corrosion +18

Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces

Rui Zhang, Ju-Chin Lin, Xiao Yu et al. · Microelectronic Engineering · 2013 · 17 citations

Geox/ge Interfaces, Electrical Engineering, Engineering +9

(Invited) Exploring the ALD Al₂O₃/In_0.53Ga_0.47As and Al₂O₃/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOS

Dennis Lin, Niamh Waldron, Guy Brammertz et al. · ECS Transactions · 2010 · 14 citations

Common Gate Stack, Electrical Engineering, Complete Cmos Solution +10