Masafumi Yokoyama

Doubling Coupling-Out Efficiency in Organic Light-Emitting Devices Using a Thin Silica Aerogel Layer

Tetsuo Tsutsui, Masayuki Yahiro, Hiroshi Yokogawa et al. · Advanced Materials · 2001 · 249 citations

Coupling-out Efficiency, Engineering, Organic Electronics +17

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Ryo Suzuki, Noriyuki Taoka, Masafumi Yokoyama et al. · Applied Physics Letters · 2012 · 162 citations

Materials Science, Electrical Engineering, Cycle Al2o3 Inter-layer +11

Zinc-blende-type MnAs nanoclusters embedded in GaAs

Masafumi Yokoyama, Hiroshi Yamaguchi, T. Ogawa et al. · Journal of Applied Physics · 2005 · 107 citations

Magnetic Properties, Engineering, Nanocluster +21

A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications

K. Joshin, T. Kikkawa, Hiroyuki Hayashi et al. · 2004 · 96 citations

Wide-bandgap Semiconductor, Drain Supply Voltage, Electrical Engineering +9

III–V/Ge channel MOS device technologies in nano CMOS era

Shinichi Takagi, Rui Zhang, Junkyo Suh et al. · Japanese Journal of Applied Physics · 2015 · 88 citations · Full text

Semiconductor Technology, Electrical Engineering, Engineering +13