Junkyo Suh

Investigation of the Changes in Electronic Properties of Nickel Oxide (NiO_<i>x</i>) Due to UV/Ozone Treatment

Raisul Islam, Gang Chen, Pranav Ramesh et al. · ACS Applied Materials & Interfaces · 2017 · 103 citations

III–V/Ge channel MOS device technologies in nano CMOS era

Shinichi Takagi, Rui Zhang, Junkyo Suh et al. · Japanese Journal of Applied Physics · 2015 · 88 citations · Full text

Semiconductor Technology, Electrical Engineering, Engineering +13

MOS interface and channel engineering for high-mobility Ge/III-V CMOS

Shinichi Takagi, Rui Zhang, S.-H Kim et al. · 2012 · 48 citations

Semiconductor Technology, Electrical Engineering, Channel Engineering +14

Passivation of multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors

Matthew Morea, Corinna E. Brendel, Kai Zang et al. · Applied Physics Letters · 2017 · 32 citations

Optical Materials, Engineering, Optoelectronic Devices +16

Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates

Junkyo Suh, Ryosho Nakane, Noriyuki Taoka et al. · Applied Physics Letters · 2011 · 25 citations

Materials Engineering, Materials Science, Electrical Engineering +13