Ryosho Nakane - Concepedia

Author

Ryosho Nakane

The University of Tokyo ORCID

Also Known As

Masahiro Suzuki, Nakane, R., Nakane, Ryosho, Nakane, Ryosho., R Nakane, R. Nakane, Ryosho NAKANE, Ryosho Nakane, 櫻井卓也

225

Publications

4.9K

Citations

H-Index

Concepts

All Affiliations

The University of Tokyo Sumitomo Chemical (Japan)Tokyo University of Information Sciences Tokyo Institute of Technology National Institute of Advanced Industrial Science and Technology

About

Ryosho Nakane is an author at The University of Tokyo specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	52	2.1K
2	Applied Physics	26	46	2K
3	Natural Sciences	7	7	361
4	Social Sciences	4	4	111
5	Chemistry	1	1	37

Ryosho Nakane

Publications

2.5K

Citations

H-Index

Page 1

	Year	Citations
Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance Shinichi Takagi, Toshifumi Iisawa, Tsutomu Tezuka, IEEE Transactions on Electron Devices Low-power ElectronicsPower ConsumptionElectrical EngineeringEngineeringCarrier-transport-enhanced Channel Cmos	2008	337
Reservoir Computing With Spin Waves Excited in a Garnet Film Ryosho Nakane, Gouhei Tanaka, Akira Hirose IEEE Access EngineeringMagnetic ResonanceSpin WavesSpin DynamicMagnetism	2018	213
Analysis of L21-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing Yota Takamura, Ryosho Nakane, Satoshi Sugahara Journal of Applied Physics	2009	149
Device structures and carrier transport properties of advanced CMOS using high mobility channels Shinichi Takagi, Tetsuo Tezuka, Toshifumi Irisawa, Solid-State Electronics Electrical EngineeringEngineeringVlsi DesignElectronic EngineeringHigh Mobility Channels	2007	139
Gate dielectric formation and MIS interface characterization on Ge Shinichi Takagi, Tatsuro Maeda, Noriyuki Taoka, Microelectronic Engineering Electrical EngineeringEngineeringBias Temperature InstabilityApplied PhysicsGate Dielectric Formation	2007	105
High-Performance $\hbox{GeO}_{2}/\hbox{Ge}$ nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping Kiyohito Morii, Tomohiro Iwasaki, Ryosho Nakane, IEEE Electron Device Letters Oxide HeterostructuresSemiconductorsElectrical EngineeringLow Junction LeakageEngineering	2010	102
Reservoir computing on a silicon platform with a ferroelectric field-effect transistor Kasidit Toprasertpong, Eishin Nako, Zeyu Wang, Communications Engineering	2022	84
High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and <inline-formula> <tex-math notation="TeX">$V_{\rm th}$ </tex-math></inline-formula> Tunability Sanghyeon Kim, Masafumi Yokoyama, Ryosho Nakane, IEEE Transactions on Electron Devices Tri-gate Inasoi MosfetsSemiconductor TechnologyElectrical EngineeringEngineeringElectronic Engineering	2014	63
Self-Aligned Metal Source/Drain In<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>As n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy Sanghyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, Applied Physics Express Materials ScienceSemiconductorsElectrical EngineeringSchottky Barrier HeightEngineering	2011	60
Quantitative analysis of atomic disorders in full-Heusler Co2FeSi alloy thin films using x-ray diffraction with Co Kα and Cu Kα sources Yota Takamura, Ryosho Nakane, Satoshi Sugahara Journal of Applied Physics	2010	50

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