Toshifumi Irisawa

Device structures and carrier transport properties of advanced CMOS using high mobility channels

Shinichi Takagi, Tetsuo Tezuka, Toshifumi Irisawa et al. · Solid-State Electronics · 2007 · 139 citations

Electrical Engineering, Engineering, Vlsi Design +7

Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)

Koji Usuda, Toshinori Numata, Toshifumi Irisawa et al. · Materials Science and Engineering B · 2005 · 96 citations

Electrical Engineering, Engineering, Nano-beam Electron Diffraction +8

Optimization of the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{GaSb}$ Interface and a High-Mobility GaSb pMOSFET

Aneesh Nainani, Toshifumi Irisawa, Ze Yuan et al. · IEEE Transactions on Electron Devices · 2011 · 93 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures

Toshifumi Irisawa, Shigeo Tokumitsu, Takanori Hattori et al. · Applied Physics Letters · 2002 · 89 citations

Semiconductor Technology, Strained Ge Channel, Electrical Engineering +8

Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) <i>p</i>-type modulation-doped heterostructures

M. Myronov, Toshifumi Irisawa, O. A. Mironov et al. · Applied Physics Letters · 2002 · 58 citations · Full text

Semiconductors, Oxide Heterostructures, Semiconductor Technology +13