Toshinori Numata

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

Shinichi Takagi, Toshifumi Iisawa, Tsutomu Tezuka et al. · IEEE Transactions on Electron Devices · 2008 · 337 citations

Low-power Electronics, Power Consumption, Electrical Engineering +14

Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)

Koji Usuda, Toshinori Numata, Toshifumi Irisawa et al. · Materials Science and Engineering B · 2005 · 96 citations

Electrical Engineering, Engineering, Nano-beam Electron Diffraction +8

Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs

Toshifumi Irisawa, Toshinori Numata, Tsutomu Tezuka et al. · IEEE Transactions on Electron Devices · 2008 · 49 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function

Youn Sung Choi, Toshinori Numata, Toshikazu Nishida et al. · Journal of Applied Physics · 2008 · 34 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Electron Transport Properties of Ultrathin-body and Tri-gate SOI nMOSFETs with Biaxial and Uniaxial Strain

Toshifumi Irisawa, Toshinori Numata, Tsutomu Tezuka et al. · 2006 · 33 citations

Semiconductor Technology, Tri-gate Soi Nmosfets, Electrical Engineering +11