Aneesh Nainani

GeSn technology: Extending the Ge electronics roadmap

Suyog Gupta, Robert Chen, Blanka Magyari-Köpe et al. · 2011 · 123 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height

Jyi-Tsong Lin, Arunanshu M. Roy, Aneesh Nainani et al. · Applied Physics Letters · 2011 · 121 citations

Engineering, Semiconductor Device, Semiconductors +21

Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer

Prashanth Paramahans Manik, Ravi Kesh Mishra, V. Pavan Kishore et al. · Applied Physics Letters · 2012 · 107 citations

Materials Science, Oxide Heterostructures, Electrical Engineering +12

Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts

Shashank Gupta, Prashanth Paramahans Manik, Ravi Kesh Mishra et al. · Journal of Applied Physics · 2013 · 102 citations

Contact Resistivity Reduction, Engineering, Fermi-level Pinning +16

High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms

Duygu Kuzum, Tejas Krishnamohan, Aneesh Nainani et al. · IEEE Transactions on Electron Devices · 2010 · 97 citations

Wide-bandgap Semiconductor, Electrical Engineering, Ge Nmos +10