Jyi-Tsong Lin

Improved Retention Time in Twin Gate 1T DRAM With Tunneling Based Read Mechanism

Nupur Navlakha, Jyi-Tsong Lin, Abhinav Kranti · IEEE Electron Device Letters · 2016 · 51 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

Retention and Scalability Perspective of Sub-100-nm Double Gate Tunnel FET DRAM

Nupur Navlakha, Jyi-Tsong Lin, Abhinav Kranti · IEEE Transactions on Electron Devices · 2017 · 43 citations

Characteristics of Recessed-Gate TFETs With Line Tunneling

Jyi-Tsong Lin, Tzu-Chi Wang, Wei‐Han Lee et al. · IEEE Transactions on Electron Devices · 2018 · 35 citations

Device Modeling, N-tfet Reaches 1.44, Electrical Engineering +11

Improving retention time in tunnel field effect transistor based dynamic memory by back gate engineering

Nupur Navlakha, Jyi-Tsong Lin, Abhinav Kranti · Journal of Applied Physics · 2016 · 34 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

Doping Dependent Assessment of Accumulation Mode and Junctionless FET for 1T DRAM

Md. Hasan Raza Ansari, Nupur Navlakha, Jyi-Tsong Lin et al. · IEEE Transactions on Electron Devices · 2018 · 31 citations

Device Modeling, Junctionless Fet, Electrical Engineering +15