Concepedia
Statistics
Publications
35
Citations
3.2K
H-Index
25
Active since
2002
Affiliations
Stanford University(Current)
Intel (United States)
Stanford SystemX Alliance
Toshiba (Japan)
United States Naval Research Laboratory
Tejas Krishnamohan is an author at Stanford University specializing in semiconductor devices, materials science, and engineering.
Publications per year
2002–2011
Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope
Tejas Krishnamohan, Donghyun Kim, Shyam Raghunathan et al. · 2008 · 491 citations
Engineering, Electrical Engineering, Physics +17
Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics
Dunwei Wang, Qian Wang, Ali Javey et al. · Applied Physics Letters · 2003 · 437 citations
Natural Sciences, Materials Engineering, Materials Science +17
On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates
Koen Martens, Chi On Chui, Guy Brammertz et al. · IEEE Transactions on Electron Devices · 2008 · 363 citations
Engineering, Electrical Engineering, Materials Science +17
Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density
Duygu Kuzum, Tejas Krishnamohan, Abhijit Pethe et al. · IEEE Electron Device Letters · 2008 · 179 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +15
Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime
Ken Uchida, Tejas Krishnamohan, Krishna C. Saraswat et al. · 2006 · 156 citations
Engineering, Electrical Engineering, Physics +16
1–5 of 35