Tejas Krishnamohan - Concepedia

Author

Tejas Krishnamohan

Stanford University

Also Known As

Krishnamohan, Tejas, T. Krishnamohan, TEJAS KRISHNAMOHAN, Tejas Krishnamohan

Publications

3.3K

Citations

H-Index

Concepts

All Affiliations

Stanford University Intel (United States)Stanford SystemX Alliance Toshiba (Japan)United States Naval Research Laboratory

About

Tejas Krishnamohan is an author at Stanford University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	35	3.1K
2	Applied Physics	24	31	2.9K
3	Electrical Engineering	24	32	3.1K
4	Computer Engineering	3	3	52
5	Materials Engineering	3	3	95

Tejas Krishnamohan

Publications

3.1K

Citations

H-Index

Page 1

	Year	Citations
Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and &#x226A;60mV/dec subthreshold slope Tejas Krishnamohan, Donghyun Kim, Shyam Raghunathan, Device ModelingSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	2008	484
Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics Dunwei Wang, Qian Wang, Ali Javey, Applied Physics Letters Materials ScienceSingle-crystal Ge NanowiresElectrical EngineeringSemiconductor TechnologyEngineering	2003	437
On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates Koen Martens, Chi On Chui, Guy Brammertz, IEEE Transactions on Electron Devices Electrical EngineeringMos DevicesEngineeringInterface Trap DensityNanoelectronics	2008	361
Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density Duygu Kuzum, Tejas Krishnamohan, Abhijit Pethe, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringGe/insulator InterfaceOzone OxidationGe 3D	2008	179
Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime Ken Uchida, Tejas Krishnamohan, Krishna C. Saraswat, Sub XmlnsEngineeringSevere Plastic DeformationIe EnhancementSemiconductor Device	2006	156
High performance germanium MOSFETs Krishna C. Saraswat, Chi On Chui, Tejas Krishnamohan, Materials Science and Engineering B Electrical EngineeringEngineeringRf SemiconductorNanoelectronicsElectronic Engineering	2006	147
High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: experiments Tejas Krishnamohan, Zoran Krivokapić, Ken Uchida, IEEE Transactions on Electron Devices SemiconductorsWide-bandgap SemiconductorElectrical EngineeringGe MosfetsSige Devices	2006	126
Ge based high performance nanoscale MOSFETs Krishna C. Saraswat, Chi On Chui, Tejas Krishnamohan, Microelectronic Engineering Electrical EngineeringEngineeringNanoelectronicsElectronic EngineeringMicroelectronics	2005	118
High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms Duygu Kuzum, Tejas Krishnamohan, Aneesh Nainani, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringGe NmosEngineeringPhysics	2010	97
High-mobility low band-to-band-tunneling strained-Germanium double-gate heterostructure FETs: Simulations Tejas Krishnamohan, Donghyun Kim, C.D. Nguyen, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringDetailed Btbt SimulationsNanoelectronicsStress-induced Leakage Current	2006	97

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