Tejas Krishnamohan

Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope

Tejas Krishnamohan, Donghyun Kim, Shyam Raghunathan et al. · 2008 · 484 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +13

Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

Dunwei Wang, Qian Wang, Ali Javey et al. · Applied Physics Letters · 2003 · 437 citations

Materials Science, Single-crystal Ge Nanowires, Electrical Engineering +12

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

Koen Martens, Chi On Chui, Guy Brammertz et al. · IEEE Transactions on Electron Devices · 2008 · 361 citations

Electrical Engineering, Mos Devices, Engineering +12

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

Duygu Kuzum, Tejas Krishnamohan, Abhijit Pethe et al. · IEEE Electron Device Letters · 2008 · 179 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Ge/insulator Interface +10

Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

Ken Uchida, Tejas Krishnamohan, Krishna C. Saraswat et al. · 2006 · 156 citations

Sub Xmlns, Engineering, Severe Plastic Deformation +19