Concepedia
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Publications
54
Citations
1.8K
H-Index
23
Active since
1989
Affiliations
Fujitsu (Japan)(Current)
Transphorm (United States)
T. Kikkawa is an author at Fujitsu (Japan) specializing in engineering, electrical engineering, and applied physics.
Top concepts
EngineeringElectrical EngineeringApplied PhysicsMicroelectronicsPower ElectronicsNanoelectronicsOptoelectronicsElectronic EngineeringMaterial ScienceMicrowave Engineering
Publications per year
1989–2016
Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics
Masahito Kanamura, Toshihiro Ohki, T. Kikkawa et al. · IEEE Electron Device Letters · 2010 · 292 citations
Wide-bandgap Semiconductor, Gate Dielectrics, Electrical Engineering +8
High performance and high reliability AlGaN/GaN HEMTs
T. Kikkawa, Kozo Makiyama, Toshihiro Ohki et al. · physica status solidi (a) · 2009 · 104 citations
Wide-bandgap Semiconductor, High‐power Gan Hemts, Electrical Engineering +9
A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications
K. Joshin, T. Kikkawa, Hiroyuki Hayashi et al. · 2004 · 96 citations
Wide-bandgap Semiconductor, Drain Supply Voltage, Electrical Engineering +9
Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion
T. Kikkawa, Miyuki Nagahara, Naoya Okamoto et al. · 2002 · 76 citations
Wide-bandgap Semiconductor, Electrical Engineering, Gm Dispersion +12
An over 200-W output power GaN HEMT push-pull amplifier with high reliability
T. Kikkawa, Toru Maniwa, Hiroyuki Hayashi et al. · 2004 · 71 citations
Wide-bandgap Semiconductor, Electrical Engineering, W-cdma Systems +12
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