T. Kikkawa

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

Masahito Kanamura, Toshihiro Ohki, T. Kikkawa et al. · IEEE Electron Device Letters · 2010 · 292 citations

Engineering, Electrical Engineering, Materials Science +15

High performance and high reliability AlGaN/GaN HEMTs

T. Kikkawa, Kozo Makiyama, Toshihiro Ohki et al. · physica status solidi (a) · 2009 · 106 citations

Engineering, Electrical Engineering, Materials Science +17

A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications

K. Joshin, T. Kikkawa, Hiroyuki Hayashi et al. · 2004 · 97 citations

Engineering, Electrical Engineering, Microelectronics +16

Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion

T. Kikkawa, Miyuki Nagahara, Naoya Okamoto et al. · 2002 · 76 citations

Engineering, Electrical Engineering, Materials Science +16

An over 200-W output power GaN HEMT push-pull amplifier with high reliability

T. Kikkawa, Toru Maniwa, Hiroyuki Hayashi et al. · 2004 · 71 citations

Engineering, Electrical Engineering, Microelectronics +16