Naoya Okamoto - Concepedia

Author

Naoya Okamoto

Also Known As

N Okamoto, N. OKAMOTO, N. Okamoto, N., Okamoto, Nako OKAMOTO, Naofumi Okamoto, Naoya OKAMOTO, Naoya Okamoto, Naoya Okamoto Naoya Okamoto, Nobuyuki Okamoto

328

Publications

2.9K

Citations

H-Index

157

Concepts

All Affiliations

Fujitsu (Japan)Shizuoka University Nagoya University Toyota Central Research and Development Laboratories (Japan)Tohoku University

About

Naoya Okamoto is an author at Fujitsu (Japan) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	75	2K
2	Applied Physics	19	42	1.1K
3	Natural Sciences	6	6	167
4	Medicine	2	2	168
5	Public Health	1	1	10

Naoya Okamoto

Publications

2.4K

Citations

H-Index

Page 1

	Year	Citations
Endoplasmic reticulum stress-induced apoptosis contributes to articular cartilage degeneration via C/EBP homologous protein Y. Uehara, Jun Hirose, Soichiro Yamabe, Osteoarthritis and Cartilage InflammationMitophagyMusculoskeletal ResearchApoptosisImmunology	2014	119
An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader Toshihiro Ohki, Atsushi Yamada, Yuichi Minoura, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringOutput Power DensityEngineeringGan Hemt	2018	82
Coherent vortices in high resolution direct numerical simulation of homogeneous isotropic turbulence: A wavelet viewpoint Naoya Okamoto, Katsunori Yoshimatsu, Kai Schneider, Physics of Fluids AeroacousticsEngineeringFluid MechanicsTurbulenceGeophysical Flow	2007	81
Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion T. Kikkawa, Miyuki Nagahara, Naoya Okamoto, Wide-bandgap SemiconductorElectrical EngineeringGm DispersionEngineeringSemiconductor Device	2002	76
Light-Induced Self-Written Polymeric Optical Waveguides for Single-Mode Propagation and for Optical Interconnections Okihiro Sugihara, H. Tsuchie, H. Endo, IEEE Photonics Technology Letters WaveguidesOptical MaterialsEngineeringPolymer TechnologyOptical Properties	2004	68
Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki, Wide-bandgap SemiconductorElectrical EngineeringUnique Device TechnologyEngineeringExcellent Output Power	2015	66
3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier Yoshitaka Niida, Yoichi Kamada, Toshihiro Ohki, Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorElectronic Engineering	2016	62
GaN single-chip transceiver frontend MMIC for X-band applications S. Masuda, Masao Yamada, Youichi Kamada, Microwave CircuitsElectrical EngineeringGan Single-chip TransceiverEngineeringRf Semiconductor	2012	59
MOCVD-grown InGaN-channel HEMT structures with electron mobility of over Naoya Okamoto, Katsuyuki Hoshino, Naoki Hara, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsCategoryiii-v SemiconductorMocvd-grown Ingan-channel Hemt	2004	58
Electric control of the spin Hall effect by intervalley transitions Naoya Okamoto, H. Kurebayashi, T. Trypiniotis, Nature Materials Quantum ScienceMagnetismSpintronicsEngineeringPhysics	2014	56

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