Yuichi Minoura

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader

Toshihiro Ohki, Atsushi Yamada, Yuichi Minoura et al. · IEEE Electron Device Letters · 2018 · 85 citations

Engineering, Electrical Engineering, Materials Science +17

Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz

Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki et al. · 2015 · 67 citations

Engineering, Electrical Engineering, Materials Science +17

3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

Yoshitaka Niida, Yoichi Kamada, Toshihiro Ohki et al. · 2016 · 62 citations

Engineering, Electrical Engineering, Microelectronics +16

Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs

Yuichi Minoura, Toshihiro Ohki, Naoya Okamoto et al. · Japanese Journal of Applied Physics · 2019 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm⁻¹ output power density

Shiro Ozaki, Junya Yaita, Atsushi Yamada et al. · Applied Physics Express · 2021 · 45 citations

Engineering, Electrical Engineering, Materials Science +16