Yoshitaka Niida

Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz

Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki et al. · 2015 · 66 citations

Wide-bandgap Semiconductor, Electrical Engineering, Unique Device Technology +12

3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

Yoshitaka Niida, Yoichi Kamada, Toshihiro Ohki et al. · 2016 · 62 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates

Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani et al. · Applied Physics Express · 2020 · 38 citations

Wide-bandgap Semiconductor, Electrical Engineering, Discrete Gan Hemts +10

Millimeter-Wave GaN HEMT for Power Amplifier Applications

K. Joshin, Kozo Makiyama, Shiro Ozaki et al. · IEICE Transactions on Electronics · 2014 · 18 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Heterogeneous Integration of Microwave GaN Power Amplifiers With Si Matching Circuits

Motonobu Sato, Yasushi Kobayashi, Yoshitaka Niida et al. · IEEE Transactions on Semiconductor Manufacturing · 2017 · 17 citations

Wide-bandgap Semiconductor, Engineering, Integrated Circuits +18