Kozo Makiyama

High performance and high reliability AlGaN/GaN HEMTs

T. Kikkawa, Kozo Makiyama, Toshihiro Ohki et al. · physica status solidi (a) · 2009 · 104 citations

Wide-bandgap Semiconductor, High‐power Gan Hemts, Electrical Engineering +9

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader

Toshihiro Ohki, Atsushi Yamada, Yuichi Minoura et al. · IEEE Electron Device Letters · 2018 · 82 citations

Wide-bandgap Semiconductor, Electrical Engineering, Output Power Density +11

Enhancement of $f_{\mathrm {max}}$ to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs

Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama et al. · IEEE Transactions on Electron Devices · 2016 · 69 citations

Electrical Engineering, 75-Nm-gate Inalas/ingaas Hemts, Engineering +13

Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz

Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki et al. · 2015 · 66 citations

Wide-bandgap Semiconductor, Electrical Engineering, Unique Device Technology +12

3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

Yoshitaka Niida, Yoichi Kamada, Toshihiro Ohki et al. · 2016 · 62 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8