Atsushi Yamada

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

Masahito Kanamura, Toshihiro Ohki, T. Kikkawa et al. · IEEE Electron Device Letters · 2010 · 292 citations

Engineering, Electrical Engineering, Materials Science +15

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader

Toshihiro Ohki, Atsushi Yamada, Yuichi Minoura et al. · IEEE Electron Device Letters · 2018 · 85 citations

Engineering, Electrical Engineering, Materials Science +17

Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs

Yuichi Minoura, Toshihiro Ohki, Naoya Okamoto et al. · Japanese Journal of Applied Physics · 2019 · 53 citations

Engineering, Electrical Engineering, Materials Science +17

C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE

H. Shigematsu, Yusuke Inoue, Akihiko Akasegawa et al. · 2009 · 50 citations

Engineering, Electrical Engineering, Microelectronics +16

First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm⁻¹ output power density

Shiro Ozaki, Junya Yaita, Atsushi Yamada et al. · Applied Physics Express · 2021 · 45 citations

Engineering, Electrical Engineering, Materials Science +16