Concepedia

Toshihiro Ohki

TO

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Publications

44

Citations

1.5K

H-Index

21

Active since

2003

Affiliations

Fujitsu (Japan)(Current)

Toshihiro Ohki is an author at Fujitsu (Japan) specializing in engineering, electrical engineering, and microelectronics.

Top concepts

EngineeringElectrical EngineeringApplied PhysicsMicroelectronicsPower ElectronicsMicrowave EngineeringElectronic EngineeringOptoelectronicsNanoelectronicsAntenna

Publications per year

2003–2024

44

Publications

44

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

Masahito Kanamura, Toshihiro Ohki, T. Kikkawa et al. · IEEE Electron Device Letters · 2010 · 292 citations

Wide-bandgap Semiconductor, Gate Dielectrics, Electrical Engineering +8

High performance and high reliability AlGaN/GaN HEMTs

T. Kikkawa, Kozo Makiyama, Toshihiro Ohki et al. · physica status solidi (a) · 2009 · 104 citations

Wide-bandgap Semiconductor, High‐power Gan Hemts, Electrical Engineering +9

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader

Toshihiro Ohki, Atsushi Yamada, Yuichi Minoura et al. · IEEE Electron Device Letters · 2018 · 82 citations

Wide-bandgap Semiconductor, Electrical Engineering, Output Power Density +11

Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz

Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki et al. · 2015 · 66 citations

Wide-bandgap Semiconductor, Electrical Engineering, Unique Device Technology +12

3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

Yoshitaka Niida, Yoichi Kamada, Toshihiro Ohki et al. · 2016 · 62 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

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