Toshihiro Ohki

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

Masahito Kanamura, Toshihiro Ohki, T. Kikkawa et al. · IEEE Electron Device Letters · 2010 · 292 citations

Engineering, Electrical Engineering, Materials Science +15

High performance and high reliability AlGaN/GaN HEMTs

T. Kikkawa, Kozo Makiyama, Toshihiro Ohki et al. · physica status solidi (a) · 2009 · 106 citations

Engineering, Electrical Engineering, Materials Science +17

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader

Toshihiro Ohki, Atsushi Yamada, Yuichi Minoura et al. · IEEE Electron Device Letters · 2018 · 85 citations

Engineering, Electrical Engineering, Materials Science +17

Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz

Kozo Makiyama, Shiro Ozaki, Toshihiro Ohki et al. · 2015 · 67 citations

Engineering, Electrical Engineering, Materials Science +17

3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

Yoshitaka Niida, Yoichi Kamada, Toshihiro Ohki et al. · 2016 · 62 citations

Engineering, Electrical Engineering, Microelectronics +16