Collapse-free high power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz

Abstract

In this work, we demonstrated an excellent output power (Pout) density of 3.0 W/mm at 96 GHz using a novel collapse-free InAlGaN/GaN-HEMT with an 80-nm gate for a millimeter-wave amplifier. The developed devices showed basic reliability for commercial products. To eliminate the current collapse, a unique double-layer silicon nitride (SiN) passivation film that has oxidation resistance was adopted. We proved the potential of InAlGaN/GaN-HEMT using our unique device technology experimentally and analytically.