K. Joshin

High Electron Mobility Transistor Logic

Takashi Mimura, K. Joshin, S. Hiyamizu et al. · Japanese Journal of Applied Physics · 1981 · 121 citations

Room Temperature, Electrical Engineering, Electronic Devices +9

High performance and high reliability AlGaN/GaN HEMTs

T. Kikkawa, Kozo Makiyama, Toshihiro Ohki et al. · physica status solidi (a) · 2009 · 104 citations

Wide-bandgap Semiconductor, High‐power Gan Hemts, Electrical Engineering +9

Selective Dry Etching of AlGaAs-GaAs Heterojunction

K. Hikosaka, Takashi Mimura, K. Joshin · Japanese Journal of Applied Physics · 1981 · 100 citations

Materials Engineering, Materials Science, Electrical Engineering +12

A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications

K. Joshin, T. Kikkawa, Hiroyuki Hayashi et al. · 2004 · 96 citations

Wide-bandgap Semiconductor, Drain Supply Voltage, Electrical Engineering +9

60 and 77GHz Power Amplifiers in Standard 90nm CMOS

Toshihide Suzuki, Yoichi Kawano, Masaru Sato et al. · 2008 · 86 citations

Electrical Engineering, Engineering, Radio Frequency +11