Concepedia

S. Hiyamizu

SH

Statistics

Publications

115

Citations

5.3K

H-Index

37

Active since

1980

Affiliations

Fujitsu (Japan)(Current)

The University of Osaka

National Institute of Information and Communications Technology

Kwansei Gakuin University

S. Hiyamizu is an author at Fujitsu (Japan) specializing in engineering, applied physics, and electrical engineering.

Top concepts

Applied PhysicsEngineeringElectrical EngineeringPhysicsOptoelectronicsSemiconductorsMicroelectronicsCondensed Matter PhysicsQuantum MaterialsMaterial Science

Publications per year

1980–2007

115

Publications

115

A New Field-Effect Transistor with Selectively Doped GaAs/n-Al<sub>x</sub>Ga<sub>1-x</sub>As Heterojunctions

Takashi Mimura, S. Hiyamizu, Toshio Fujii et al. · Japanese Journal of Applied Physics · 1980 · 766 citations · Full text

Semiconductors, Electrical Engineering, Engineering +11

Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

Y. Yamashita, Akira Endoh, K. Shinohara et al. · IEEE Electron Device Letters · 2002 · 289 citations

Wide-bandgap Semiconductor, Electrical Engineering, Millimeter Wave Technology +14

A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)

Naoki Yokoyama, Kenichi Imamura, Shunichi Muto et al. · Japanese Journal of Applied Physics · 1985 · 265 citations

Frequency Multiplier, Categoryquantum Electronics, Electrical Engineering +12

Breakdown of the quantum Hall effect due to electron heating

Susumu Komiyama, T. Takamasu, S. Hiyamizu et al. · Solid State Communications · 1985 · 187 citations

Quantum Science, Quantum Hall Effect, Engineering +6

Improved Electron Mobility Higher than 10<sup>6</sup> cm<sup>2</sup>/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE

S. Hiyamizu, Junji Saito, Kazuo Nanbu et al. · Japanese Journal of Applied Physics · 1983 · 163 citations

Semiconductors, Oxide Heterostructures, Electrical Engineering +14

Rows per page

1–5 of 115