Concepedia
Statistics
Publications
115
Citations
5.3K
H-Index
37
Active since
1980
Affiliations
Fujitsu (Japan)(Current)
The University of Osaka
National Institute of Information and Communications Technology
Kwansei Gakuin University
Kubota (Japan)
S. Hiyamizu is an author at Fujitsu (Japan) specializing in semiconductor materials, semiconductor devices, and engineering.
Publications per year
1980–2007
A New Field-Effect Transistor with Selectively Doped GaAs/n-Al<sub>x</sub>Ga<sub>1-x</sub>As Heterojunctions
Takashi Mimura, S. Hiyamizu, Toshio Fujii et al. · Japanese Journal of Applied Physics · 1980 · 780 citations · Full text
Engineering, Electrical Engineering, Materials Science +14
Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz
Y. Yamashita, Akira Endoh, K. Shinohara et al. · IEEE Electron Device Letters · 2002 · 289 citations
Engineering, Electrical Engineering, Physics +15
A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
Naoki Yokoyama, Kenichi Imamura, Shunichi Muto et al. · Japanese Journal of Applied Physics · 1985 · 265 citations
Engineering, Electrical Engineering, Physics +17
Breakdown of the quantum Hall effect due to electron heating
Susumu Komiyama, T. Takamasu, S. Hiyamizu · Solid State Communications · 1985 · 187 citations
Natural Sciences, Electrical Engineering, Physics +9
Improved Electron Mobility Higher than 10<sup>6</sup> cm<sup>2</sup>/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
S. Hiyamizu, Junji Saito, Kazuo Nanbu et al. · Japanese Journal of Applied Physics · 1983 · 164 citations
Engineering, Materials Science, Physics +17
1–5 of 115