A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_1-xAs Heterojunctions

Abstract

Studies of field-effect control of the high mobility electrons in MBE-grown selectively doped GaAs/n-Al x Ga 1- x As heterojunctions are described. Successful fabrication of a new field-effect transistor, called a high electron mobility transistor (HEMT), with extremely high-speed microwave capabilities is reported.