Japanese Journal of Applied Physics · 1983 · 164 citations · 23 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor Thin FilmsTwo-dimensional SemiconductorsCarrier Transport In Quantum WellsElectron MobilityHeterostructure DevicesHeterostructuresQuantum Well HeterostructuresTransport In HeterostructuresTwo-dimensional Electron GasesTwo-dimensional Semiconductor Heterostructures
Electron mobility of quasi-two dimensional electron gas (2DEG) in selectively doped GaAs/ N -Al x Ga 1- x As ( x =0.3) heterostructures grown by MBE was investigated as a function of thickness of an undoped Al x Ga 1- x As spacer-layer (0–200 Å) introduced between a Si-doped AlGaAs layer and an undoped GaAs layer, at 77 K and 5 K. Mobility of 2DEG as high as 2,120,000 cm 2 /Vs at 5 K was achieved with a spacer-layer thickness of 200 Å. This electron mobility is higher than any observed so far in semiconductor materials.
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Neutral Impurity Scattering in Semiconductors
C. Erginsoy · Physical Review · 1950 · 688 citations
Two-dimensional electron gas at a semiconductor-semiconductor interface
H. L. Störmer, R. Dingle, A. C. Gossard et al. · Solid State Communications · 1979 · 448 citations