Tomonori Ishikawa - Concepedia

Author

Tomonori Ishikawa

Fujitsu (Japan)

Also Known As

TOMONORI ISHIKAWA, Tomonori ISHIKAWA, Tomonori Ishikawa, Tomonori Ishikawa Tomonori Ishikawa

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

Fujitsu (Japan)Photonics Electronics Technology Research Association

About

Tomonori Ishikawa is an author at Fujitsu (Japan) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	32	1.2K
2	Applied Physics	18	32	1.2K
3	Electrical Engineering	15	20	758
4	Materials Engineering	3	3	108
5	Chemical Engineering	1	1	17

Tomonori Ishikawa

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Improved Electron Mobility Higher than 10<sup>6</sup> cm<sup>2</sup>/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE S. Hiyamizu, Junji Saito, Kazuo Nanbu, Japanese Journal of Applied Physics SemiconductorsOxide HeterostructuresElectrical EngineeringAluminium NitrideEngineering	1983	163
Site-controlled self-organization of individual InAs quantum dots by scanning tunneling probe-assisted nanolithography S. Kohmoto, Hitoshi Nakamura, Tomonori Ishikawa, Applied Physics Letters Categoryquantum ElectronicsEngineeringNanodevicesOptoelectronic DevicesSemiconductor Nanostructures	1999	125
Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by <i>in situ</i> electron-beam lithography Tomonori Ishikawa, Tetsuya Nishimura, S. Kohmoto, Applied Physics Letters SemiconductorsEngineeringElectron-beam LithographyPhysicsBeam Lithography	2000	102
Site control of self-organized InAs dots on GaAs substrates by <i>in situ</i> electron-beam lithography and molecular-beam epitaxy Tomonori Ishikawa, S. Kohmoto, Kiyoshi Asakawa Applied Physics Letters EngineeringElectron-beam LithographyOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1998	99
Electrical Properties of Si-Doped Al<sub>x</sub>Ga<sub>1-x</sub>As Layers Grown by MBE Tomonori Ishikawa, Junji Saito, Shigehiko Sasa, Japanese Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringSi DonorAlas Mole Fraction	1982	89
Electronic and Ionic Conduction in Cu<sub>2-δ</sub>Se, Cu<sub>2-δ</sub>S and Cu<sub>2-δ</sub>(Se, S) Tomonori Ishikawa, Shin-ya Miyatani Journal of the Physical Society of Japan EngineeringElectronic StructureThermal ConductivityElectronic ConductorsSuperconductivity	1977	63
Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE Shigehiko Sasa, Junji Saito, Kazuo Nanbu, Japanese Journal of Applied Physics Oxide HeterostructuresWide-bandgap SemiconductorElectrical EngineeringInverted HeterostructureEngineering	1984	48
Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy Junji Saito, Tomonori Ishikawa, Tomohiro Nakamura, Japanese Journal of Applied Physics EngineeringSemiconductor MaterialsOptoelectronic DevicesGaas SubstrateThermal Etching	1986	37
Classification of Surface Defects on GaAs Grown by Molecular Beam Epitaxy Kazuo Nanbu, Junji Saito, Tomonori Ishikawa, Journal of The Electrochemical Society EngineeringDefect ToleranceElectron MicroscopyNanoelectronicsMolecular Beam Epitaxy	1986	37
Molecular Beam Epitaxy of GaAs/AlAs on Mesa Stripes along the [001] Direction for Quantum-Wire Fabrication M. López‐López, Tomonori Ishikawa, Y. Nomura Japanese Journal of Applied Physics Materials ScienceSemiconductorsGaas GrowthEngineeringPhysics	1993	33

Page 1