Shunichi Muto - Concepedia

Author

Shunichi Muto

Also Known As

Muto, S., Muto, Shunichi, N. Yokoyama, S Muto, S. MUTO, S. Muto, SHUNICHI MUTO, Shunichi MUTO, Shunichi Muto, Shunichi Muto Shunichi Muto

265

Publications

3.7K

Citations

H-Index

Concepts

All Affiliations

Fujitsu (Japan)Hokkaido University

About

Shunichi Muto is an author at Fujitsu (Japan) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	30	80	3K
2	Natural Sciences	10	11	292
3	Health Sciences	1	1	17
4	Medicine	1	1	13
5	Public Health	1	1	17

Shunichi Muto

Publications

3.2K

Citations

H-Index

Page 1

	Year	Citations
A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET) Naoki Yokoyama, Kenichi Imamura, Shunichi Muto, Japanese Journal of Applied Physics Frequency MultiplierCategoryquantum ElectronicsElectrical EngineeringEngineeringQuantum Computing	1985	265
Self-consistent analysis of resonant tunneling current H. Ohnìshì, Tsuguo Inata, Shunichi Muto, Applied Physics Letters Device ModelingQuantum ScienceElectrical EngineeringResonant Tunneling StructureEngineering	1986	161
New Optical Memory Structure Using Self-Assembled InAs Quantum Dots Kenichi Imamura, Yoshihiro Sugiyama, Yoshiaki Nakata, Japanese Journal of Applied Physics PhotonicsOptical MemoryOptical MaterialsEngineeringPhysics	1995	149
Direct observation of picosecond spin relaxation of excitons in GaAs/AlGaAs quantum wells using spin-dependent optical nonlinearity Atsushi Tackeuchi, Shunichi Muto, Tsuguo Inata, Applied Physics Letters EngineeringSpin Relaxation TimeMagnetic ResonanceSpin DynamicSpin Phenomenon	1990	116
A Pseudomorphic In<sub>0.53</sub>Ga<sub>0.47</sub>As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature Tsuguo Inata, Shunichi Muto, Yoshiaki Nakata, Japanese Journal of Applied Physics Materials ScienceRoom TemperatureWide-bandgap SemiconductorEngineeringGa 0.47	1987	108
On a Possibility of Wavelength-Domain-Multiplication Memory Using Quantum Boxes Shunichi Muto Japanese Journal of Applied Physics Quantum BoxesQuantum SciencePhotonicsOptical MemoryEngineering	1995	94
Conduction Band Edge Discontinuity of In<sub>0.52</sub>Ga<sub>0.48</sub>As/In<sub>0.52</sub>(Ga<sub>1-x</sub>Al<sub>x</sub>)<sub>0.48</sub>As(0≦x≦1) Heterostructures Yoshihiro Sugiyama, Tsuguo Inata, Toshio Fujii, Japanese Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	1986	89
Effect of Silicon Doping Profile on I–V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE Shunichi Muto, Tsuguo Inata, H. Ohnìshì, Japanese Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringI–v CharacteristicsEngineering	1986	85
Island Size Scaling in InAs/GaAs Self-Assembled Quantum Dots Y. Ebiko, Shunichi Muto, Dai Suzuki, Physical Review Letters Materials ScienceIi-vi SemiconductorEngineeringPhysicsNanoelectronics	1998	83
Novel InGaAs/GaAs quantum dot structures formed in tetrahedral-shaped recesses on (111)B GaAs substrate using metalorganic vapor phase epitaxy Yoshihiro Sugiyama, Yoshiki Sakuma, Shunichi Muto, Applied Physics Letters PhotoluminescenceEngineeringPhysicsB Gaas SubstrateNanoelectronics	1995	82

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