Yoshihiro Sugiyama - Concepedia

Author

Yoshihiro Sugiyama

Also Known As

Y Sugiyama, Y. SUGIYAMA, Y. Sugiyama, YOSHIHIRO SUGIYAMA, Yoshihiro SUGIYAMA, Yoshihiro Sugiyama, Yoshihiro Sugiyama Yoshihiro Sugiyama, Yuko SUGIYAMA, Yurika Sugiyama

133

Publications

3.5K

Citations

H-Index

Concepts

All Affiliations

Fujitsu (Japan)Tokyo Institute of Technology Hokkaido University Tohoku University Xiangtan University

About

Yoshihiro Sugiyama is an author at Fujitsu (Japan) specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	30	55	3K
2	Applied Physics	30	53	3K
3	Medicine	2	2	186
4	Natural Sciences	1	1	43
5	Chemistry	1	1	10

Yoshihiro Sugiyama

Publications

3.4K

Citations

H-Index

Page 1

	Year	Citations
Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance Kentaro Kinoshita, K. Tsunoda, Yoshihiro Sato, Applied Physics Letters Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringPhysics	2008	268
High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application Chikako Yoshida, K. Tsunoda, Hideyuki Noshiro, Applied Physics Letters Non-volatile MemoryPt∕tio2∕tin DevicesEngineeringResistance Memory ApplicationsEmerging Memory Technology	2007	267
Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide Kentaro Kinoshita, Tomoyuki Tamura, M. Aoki, Applied Physics Letters Non-volatile MemoryEngineeringFerroelectric Random-access MemoryData Retention PropertiesResistor	2006	213
Direct observation of oxygen movement during resistance switching in NiO/Pt film Chikako Yoshida, Kentaro Kinoshita, Takahiro Yamasaki, Applied Physics Letters Materials ScienceLocal Writing ProcessEngineeringPhysicsOxidation Resistance	2008	176
Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V K. Tsunoda, Kentaro Kinoshita, Hideyuki Noshiro, Materials ScienceLow PowerElectrical EngineeringCell TransistorEngineering	2007	155
New Optical Memory Structure Using Self-Assembled InAs Quantum Dots Kenichi Imamura, Yoshihiro Sugiyama, Yoshiaki Nakata, Japanese Journal of Applied Physics PhotonicsOptical MemoryOptical MaterialsEngineeringPhysics	1995	149
Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model Yoshihiro Sato, Kentaro Kinoshita, Masaki Aoki, Applied Physics Letters EngineeringBinary MetalThermal ConductivityNanoelectronicsThermal Conduction	2007	118
Epidemiology and prognosis of subungual melanoma in 34 Japanese patients T. Kato, T. Suetake, Yoshihiro Sugiyama, British Journal of Dermatology MelanomaHistopathologyPathologyOral MedicineSubungual Malignant Melanoma	1996	111
Room temperature CW operation at the ground stateof self-formed quantum dot lasers with multi-stacked dot layer H. Shōji, Yoshihiro Nakata, Kohki Mukai, Electronics Letters	1996	105
Temperature dependent lasing characteristics of multi-stacked quantum dot lasers Hajime Shoji, Yoshiaki Nakata, Kohki Mukai, Applied Physics Letters Quantum SciencePhotonicsQuantum PhotonicsEngineeringLaser Science	1997	102

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