Yoshihiro Sugiyama

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

Kentaro Kinoshita, K. Tsunoda, Yoshihiro Sato et al. · Applied Physics Letters · 2008 · 268 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +13

High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

Chikako Yoshida, K. Tsunoda, Hideyuki Noshiro et al. · Applied Physics Letters · 2007 · 267 citations

Non-volatile Memory, Pt∕tio2∕tin Devices, Engineering +18

Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide

Kentaro Kinoshita, Tomoyuki Tamura, M. Aoki et al. · Applied Physics Letters · 2006 · 213 citations

Non-volatile Memory, Engineering, Ferroelectric Random-access Memory +20

Direct observation of oxygen movement during resistance switching in NiO/Pt film

Chikako Yoshida, Kentaro Kinoshita, Takahiro Yamasaki et al. · Applied Physics Letters · 2008 · 176 citations

Materials Science, Local Writing Process, Engineering +15

Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V

K. Tsunoda, Kentaro Kinoshita, Hideyuki Noshiro et al. · 2007 · 155 citations

Materials Science, Low Power, Electrical Engineering +14