High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

Abstract

We have fabricated and investigated the bipolar resistive switching characteristics of Pt/rutile-TiO2∕TiN devices for resistance memory applications. Data writing for five-level resistance states has been demonstrated by varying the amplitude of 5ns voltage pulses. In addition, data retention of more than 256h at 85°C and an excellent endurance of over 2×106cycles have been confirmed. These results indicate that Pt∕TiO2∕TiN devices have a potential for nonvolatile multiple-valued memory devices.