Hideyuki Noshiro

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

Kentaro Kinoshita, K. Tsunoda, Yoshihiro Sato et al. · Applied Physics Letters · 2008 · 268 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +13

High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

Chikako Yoshida, K. Tsunoda, Hideyuki Noshiro et al. · Applied Physics Letters · 2007 · 267 citations

Non-volatile Memory, Pt∕tio2∕tin Devices, Engineering +18

Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V

K. Tsunoda, Kentaro Kinoshita, Hideyuki Noshiro et al. · 2007 · 155 citations

Materials Science, Low Power, Electrical Engineering +14

Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET

Yoshihiro Sato, Koji Tsunoda, Kentaro Kinoshita et al. · IEEE Transactions on Electron Devices · 2008 · 93 citations

Electrical Resistance, Non-volatile Memory, Electrical Engineering +13

RuO₂ Thin Films as Bottom Electrodes for High Dielectric Constant Materials

K. Yoshikawa, Takafumi Kimura, Hideyuki Noshiro et al. · Japanese Journal of Applied Physics · 1994 · 27 citations

Dielectrics, Engineering, Thin Film Process Technology +18