Yoshihiro Sato - Concepedia

Author

Yoshihiro Sato

Also Known As

Sato Yoshihiro, Sato, Y., Sato, Yoshiaki, Sato, Yoshihiro, Sato,Yoshihiro, T. Ezaki, Y Sato, Y. Sato, Yoshida, Tetsuya, Yoshihiro SATO

171

Publications

Citations

H-Index

Concepts

All Affiliations

Fujitsu (Japan)Panasonic (Japan)University of Tsukuba National Institute of Advanced Industrial Science and Technology International Christian University

About

Yoshihiro Sato is an author at Fujitsu (Japan) specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	23	1.7K
2	Applied Physics	11	13	1.3K
3	Health Sciences	2	2	23
4	Medicine	1	1	10
5	Chemistry	1	1	11

Yoshihiro Sato

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
GaN Power Transistors on Si Substrates for Switching Applications Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi, Proceedings of the IEEE Electrical EngineeringEngineeringPower DeviceNanoelectronicsSi Substrates	2010	516
Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance Kentaro Kinoshita, K. Tsunoda, Yoshihiro Sato, Applied Physics Letters Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringPhysics	2008	268
Effects of mechanical properties of adhesive resins on bond strength to dentin Akiko Takahashi, Yoshihiro Sato, Shigeru Uno, Dental Materials Materials ScienceEngineeringMechanical PropertiesBond StrengthAdhesive Material	2002	215
Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V K. Tsunoda, Kentaro Kinoshita, Hideyuki Noshiro, Materials ScienceLow PowerElectrical EngineeringCell TransistorEngineering	2007	155
Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model Yoshihiro Sato, Kentaro Kinoshita, Masaki Aoki, Applied Physics Letters EngineeringBinary MetalThermal ConductivityNanoelectronicsThermal Conduction	2007	118
Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET Yoshihiro Sato, Koji Tsunoda, Kentaro Kinoshita, IEEE Transactions on Electron Devices Electrical ResistanceNon-volatile MemoryElectrical EngineeringCell TransistorEngineering	2008	93
Fast cycle RAM (FCRAM); a 20-ns random row access, pipe-lined operating DRAM Yoshihiro Sato, Toshisada Suzuki, T. Aikawa, Hardware SecurityDram CoreMemory ArchitectureNon-volatile MemoryEngineering	2002	59
Over 1.7 kV normally-off GaN hybrid MOS-HFETs with a lower on-resistance on a Si substrate Nariaki Ikeda, Ryosuke Tamura, Takuya Kokawa, Wide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineeringBarrier Layer	2011	36
6.1 An over 120dB simultaneous-capture wide-dynamic-range 1.6e− ultra-low-reset-noise organic-photoconductive-film CMOS image sensor Kazuko Nishimura, Yoshihiro Sato, Junji Hirase, EngineeringExtended Dynamic RangeImage SensorPhotoelectric SensorComputational Imaging	2016	33
An 8K4K-resolution 60fps 450ke<sup>−</sup>-saturation-signal organic-photoconductive-film global-shutter CMOS image sensor with in-pixel noise canceller Kazuko Nishimura, Sanshiro Shishido, Yasuo Miyake, In-pixel Noise CancellerGlobal Shutter8K4k-resolution 60FpsEngineeringReadout Speed	2018	32

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