Yuki Niiyama

GaN Power Transistors on Si Substrates for Switching Applications

Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi et al. · Proceedings of the IEEE · 2010 · 522 citations

Engineering, Electrical Engineering, Materials Science +17

Enhancement-mode gan hybrid mos-hemts with r on,sp of 20 mω-cm²

W. Huang, Zhongda Li, T. Paul Chow et al. · 2008 · 64 citations

Engineering, Electrical Engineering, Materials Science +17

Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation

Hiroshi Kambayashi, Yuki Niiyama, Shinya Ootomo et al. · IEEE Electron Device Letters · 2007 · 61 citations

Engineering, Electrical Engineering, Materials Science +16

High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates

Takehiko Nomura, Hiroshi Kambayashi, Yuki Niiyama et al. · Solid-State Electronics · 2007 · 47 citations

Engineering, Electrical Engineering, Materials Science +14

High‐quality SiO₂/GaN interface for enhanced operation field‐effect transistor

Yuki Niiyama, T. Shinagawa, Shinya Ootomo et al. · physica status solidi (a) · 2007 · 29 citations

Engineering, Materials Engineering, Materials Science +15