Yuki Niiyama - Concepedia

Author

Yuki Niiyama

Furukawa Electric (Japan)

Also Known As

Y. Niiyama, Yuki Niiyama

Publications

944

Citations

H-Index

Concepts

All Affiliations

Furukawa Electric (Japan)Rensselaer Polytechnic Institute

About

Yuki Niiyama is an author at Furukawa Electric (Japan) specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	902
2	Electrical Engineering	13	14	902
3	Applied Physics	12	12	851
4	Microelectronics	8	8	711
5	Materials Science	2	2	49

Yuki Niiyama

Publications

902

Citations

H-Index

Page 1

	Year	Citations
GaN Power Transistors on Si Substrates for Switching Applications Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi, Proceedings of the IEEE Electrical EngineeringEngineeringPower DeviceNanoelectronicsSi Substrates	2010	516
Enhancement-mode gan hybrid mos-hemts with r on,sp of 20 mω-cm<sup>2</sup> W. Huang, Zhongda Li, T. Paul Chow, Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringBottom P-gan LayerEngineering	2008	64
Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation Hiroshi Kambayashi, Yuki Niiyama, Shinya Ootomo, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringIon ImplantationEngineeringSi Substrates	2007	60
High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates Takehiko Nomura, Hiroshi Kambayashi, Yuki Niiyama, Solid-State Electronics Wide-bandgap SemiconductorElectrical EngineeringEngineeringSapphire SubstratesApplied Physics	2007	43
Lateral Implanted RESURF GaN MOSFETs with BV up to 2.5 kV W. Huang, T. Paul Chow, Yuki Niiyama, Wide-bandgap SemiconductorElectrical EngineeringEngineeringReliability LifetimePower Device	2008	28
High‐quality SiO<sub>2</sub>/GaN interface for enhanced operation field‐effect transistor Yuki Niiyama, T. Shinagawa, Shinya Ootomo, physica status solidi (a) SemiconductorsSio 2Electrical EngineeringMaterials ScienceInterface Quality	2007	28
Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates Yuki Niiyama, Hiroshi Kambayashi, Shinya Ootomo, Japanese Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringEngineeringSapphire SubstratesApplied Physics	2008	26
250°C operation normally-off GaN MOSFETs Yuki Niiyama, Hiroshi Kambayashi, Shinya Ootomo, Solid-State Electronics Electrical EngineeringEngineeringPower Semiconductor DeviceGan MosfetsGan Power Device	2007	23
Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors Yuki Niiyama, Shinya Ootomo, Jiang Li, Japanese Journal of Applied Physics Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringMg-doped Gallium Nitride	2008	22
Experimental Demonstration of Novel High-Voltage Epilayer RESURF GaN MOSFET W. Huang, T. Paul Chow, Yuki Niiyama, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringExperimental DemonstrationApplied Physics	2009	22

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