Yuki Niiyama

GaN Power Transistors on Si Substrates for Switching Applications

Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi et al. · Proceedings of the IEEE · 2010 · 516 citations

Electrical Engineering, Engineering, Power Device +11

Enhancement-mode gan hybrid mos-hemts with r on,sp of 20 mω-cm²

W. Huang, Zhongda Li, T. Paul Chow et al. · 2008 · 64 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8

Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation

Hiroshi Kambayashi, Yuki Niiyama, Shinya Ootomo et al. · IEEE Electron Device Letters · 2007 · 60 citations

Wide-bandgap Semiconductor, Electrical Engineering, Ion Implantation +11

High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates

Takehiko Nomura, Hiroshi Kambayashi, Yuki Niiyama et al. · Solid-State Electronics · 2007 · 43 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +4

Lateral Implanted RESURF GaN MOSFETs with BV up to 2.5 kV

W. Huang, T. Paul Chow, Yuki Niiyama et al. · 2008 · 28 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9