Enhancement-mode gan hybrid mos-hemts with r on,sp of 20 mω-cm²

Abstract

We report on the experimental demonstration of a novel n-channel GaN hybrid MOS-HEMT realized on AlGaN/GaN heterostructure on sapphire substrate. This enhancement-mode MOS-gated heterojunction transistor, with 3 mum channel length and 20 mum RESURF length, exhibited a specific on-resistance as low as 20 mOmega-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Simulations indicated the strong dependence of device breakdown voltage on the doping and concentration of the bottom p-GaN layer and its important role in reducing the surface electric field to suppress oxide breakdown.