Zhongda Li

Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

Zhongda Li, John Waldron, Theeradetch Detchprohm et al. · Applied Physics Letters · 2013 · 124 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +15

Design and Simulation of 5–20-kV GaN Enhancement-Mode Vertical Superjunction HEMT

Zhongda Li, T. Paul Chow · IEEE Transactions on Electron Devices · 2013 · 73 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Enhancement-mode gan hybrid mos-hemts with r on,sp of 20 mω-cm²

W. Huang, Zhongda Li, T. Paul Chow et al. · 2008 · 64 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +8

Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs

Shinya Takashima, Zhongda Li, T. Paul Chow · IEEE Transactions on Electron Devices · 2013 · 59 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Impact of annealing on ALD Al₂O₃ gate dielectric for GaN MOS devices

T. Marron, Shinya Takashima, Zhongda Li et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 43 citations

Materials Engineering, Semiconductors, Electrical Engineering +13