John Waldron

Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

Zhongda Li, John Waldron, Theeradetch Detchprohm et al. · Applied Physics Letters · 2013 · 126 citations

Engineering, Electrical Engineering, Materials Science +17

Vectorial Photoelectric Effect in Clean Molybdenum*

D. W. Juenker, John Waldron, R. J. Jaccodine · Journal of the Optical Society of America · 1964 · 37 citations

Natural Sciences, Materials Science, Optics +7

Physics-based analytical model for high-voltage bidirectional GaN transistors using lateral GaN power HEMT

John Waldron, T. Paul Chow · 2013 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

High temperature characteristics of monolithically integrated LED and MOS‐channel HEMT in GaN using selective epi removal

Zhongda Li, John Waldron, Sauvik Chowdhury et al. · physica status solidi (a) · 2015 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Optical Properties of Clean Molybdenum*

John Waldron, D. W. Juenker · Journal of the Optical Society of America · 1964 · 20 citations

Natural Sciences, Chemistry, Materials Science +17