Sauvik Chowdhury

Comparison of 600V Si, SiC and GaN Power Devices

Sauvik Chowdhury, Zachary Stum, Zhong Da Li et al. · Materials science forum · 2014 · 43 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n⁻Substrates

Sauvik Chowdhury, Collin Hitchcock, Zachary Stum et al. · IEEE Electron Device Letters · 2016 · 30 citations

Engineering, Electrical Engineering, Materials Science +17

Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs

Sauvik Chowdhury, Collin Hitchcock, Zachary Stum et al. · IEEE Transactions on Electron Devices · 2016 · 30 citations

Engineering, Electrical Engineering, Materials Science +17

1200V, 25A bi-directional Si DMOS IGBT fabricated with fusion wafer bonding

Jia Wu, Sauvik Chowdhury, Collin Hitchcock et al. · 2014 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

High temperature characteristics of monolithically integrated LED and MOS‐channel HEMT in GaN using selective epi removal

Zhongda Li, John Waldron, Sauvik Chowdhury et al. · physica status solidi (a) · 2015 · 21 citations

Engineering, Electrical Engineering, Materials Science +17