4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n⁻Substrates

Abstract

We experimentally demonstrate 4H-SiC n-channel, planar gate insulated gate bipolar transistors (IGBTs) on 180-μm thick lightly doped free-standing n- substrates with ion-implanted collector regions, and metal-oxide-semiconductor gates on (0001) and (000-1) surfaces. The IGBTs show an ON-state current density of 20 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at a power dissipation of 300 W/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The threshold voltages are measured to be 7.5 V and 10.5 V on Si-face and C-face, respectively. Both IGBTs show a small positive temperature coefficient of the forward voltage drop, which is useful for easy parallelization of devices.