Zachary Stum

Comparison of 600V Si, SiC and GaN Power Devices

Sauvik Chowdhury, Zachary Stum, Zhong Da Li et al. · Materials science forum · 2014 · 43 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

3.3kV SiC MOSFETs designed for low on-resistance and fast switching

Alexander Bolotnikov, Peter A. Losee, Kevin Matocha et al. · 2012 · 42 citations

Engineering, Electrical Engineering, Microelectronics +16

4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n⁻Substrates

Sauvik Chowdhury, Collin Hitchcock, Zachary Stum et al. · IEEE Electron Device Letters · 2016 · 30 citations

Engineering, Electrical Engineering, Materials Science +17

Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs

Sauvik Chowdhury, Collin Hitchcock, Zachary Stum et al. · IEEE Transactions on Electron Devices · 2016 · 30 citations

Engineering, Electrical Engineering, Materials Science +17

Realizing the full potential of silicon carbide power devices

Ljubisa Stevanovic, Kevin Matocha, Zachary Stum et al. · 2010 · 16 citations

Engineering, Electrical Engineering, Materials Science +17