Alexander Bolotnikov

Author

Also Known As

A Bolotnikov, A. Bolotnikov, A. V. Bolotnikov, A.V. Bolotnikov, Alexander Bolotnikov, Alexander V. Bolotnikov, Collective Enterprise "Academic House"

Publications

625

Citations

H-Index

Concepts

All Affiliations

GE Global Research (United States)General Electric (United States)University of South Carolina General Electric (Israel)

About

Alexander Bolotnikov is an author at GE Global Research (United States) specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	19	545
2	Electrical Engineering	16	19	545
3	Applied Physics	8	8	192
4	Materials Science	3	3	47
5	Computer Engineering	1	1	17

Alexander Bolotnikov

Publications

545

Citations

H-Index

Page 1

	Year	Citations
Overview of 1.2kV &#x2013; 2.2kV SiC MOSFETs targeted for industrial power conversion applications Alexander Bolotnikov, Peter A. Losee, Alfred Permuy, Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHigh Voltage Engineering	2015	99
Junction Termination Extension Implementing Drive-in Diffusion of Boron for High-Voltage SiC Devices Alexander Bolotnikov, Peter G. Muzykov, Qingchun Zhang, IEEE Transactions on Electron Devices Mask OptimizationElectrical EngineeringEngineeringHigh Voltage EngineeringPower Device	2010	44
3.3kV SiC MOSFETs designed for low on-resistance and fast switching Alexander Bolotnikov, Peter A. Losee, Kevin Matocha, Electrical EngineeringSemiconductor DeviceEngineeringSic Vertical DmosfetsPower Device	2012	41
High performance SiC MOSFET module for industrial applications Ljubisa Stevanovic, Brian Rowden, Maja Harfman Todorovic, Electrical EngineeringIndustrial ApplicationsEngineeringHigh Voltage EngineeringPower Device	2016	39
SiC MOSFET design considerations for reliable high voltage operation P. A. Losee, Alexander Bolotnikov, Lihua Yu, ReliabilityElectrical EngineeringSemiconductor DeviceEngineeringHigh Voltage Engineering	2017	35
Optically Activated 4H-SiC p-i-n Diodes for High-Power Applications Feng Zhao, Md. Moinul Islam, Peter G. Muzykov, IEEE Electron Device Letters PhotonicsElectrical EngineeringOptical MaterialsEngineeringPower Device	2009	33
4.5kV SiC Charge-Balanced MOSFETs with Ultra-Low On-Resistance Reza Ghandi, Alexander Bolotnikov, Stacey Kennerly, Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHigh Voltage Engineering	2020	33
1.2kV class SiC MOSFETs with improved performance over wide operating temperature P. A. Losee, Alexander Bolotnikov, Lihua Yu, EngineeringPower ElectronicsSemiconductor DeviceHigh Voltage EngineeringWide Operating Temperature	2014	31
3kV SiC Charge-Balanced Diodes Breaking Unipolar Limit Reza Ghandi, Alexander Bolotnikov, David Lilienfeld, Semiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineeringHigh Voltage Engineering	2019	23
SiC Charge-Balanced Devices Offering Breakthrough Performance Surpassing the 1-D Ron versus BV Limit Alexander Bolotnikov, Peter A. Losee, Reza Ghandi, Materials science forum Electrical EngineeringEngineeringPhysicsPower DeviceNanoelectronics	2019	22

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