High performance SiC MOSFET module for industrial applications

Abstract

A novel 1.7kV, 500A low inductance half-bridge module has been developed for fast-switching SiC devices. The module has a maximum temperature rating of 175°C. There are 12 GE SiC MOSFET chips per switch and the MOSFET's body diode is utilized as the freewheeling diode. The module's typical on-resistance is 3.8mOhms at 25°C and 5.8mOhms at 175°C. Internal loop inductance measured from DC input terminals is 4.5nH, approximately 75% lower than that of a standard IGBT module. When connected to a low inductance busbars, the module can be switched in 50ns without excessive voltage and current overshoots. Double pulse inductive switching losses at VDS=1000V, Id=450A and TJ=150°C are: EON=21.5mJ, EOFF=16.5mJ and EREC=6mJ. The losses are at least ten times lower when compared to a similarly rated IGBT module, highlighting the SiC advantage for higher switching frequency applications. Short circuit testing was performed, demonstrating good ruggedness albeit the need for a fast protection circuit.