2012 · 42 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIii-v SemiconductorsIntegrated Circuit DesignSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesHigh-power ConversionPart Count ReductionPower Conversion SystemsPower MosfetsSilicon Carbide Power DevicesSilicon Carbide Power ElectronicsSwitching LossesWide Bandgap Semiconductor Converters
This paper discusses the latest developments in the optimization and fabrication of 3.3kV SiC vertical DMOSFETs. The devices show superior on-state and switching losses compared to the even the latest generation of 3.3kV fast Si IGBTs and promise to extend the upper switching frequency of high-voltage power conversion systems beyond several tens of kHz without the need to increase part count with 3-level converter stacks of faster 1.7kV IGBTs.
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