3.3kV SiC MOSFETs designed for low on-resistance and fast switching

Abstract

This paper discusses the latest developments in the optimization and fabrication of 3.3kV SiC vertical DMOSFETs. The devices show superior on-state and switching losses compared to the even the latest generation of 3.3kV fast Si IGBTs and promise to extend the upper switching frequency of high-voltage power conversion systems beyond several tens of kHz without the need to increase part count with 3-level converter stacks of faster 1.7kV IGBTs.