Materials science forum · 2014 · 43 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ModelingDevice SimulationSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesPower Device SimulationPower Electronics DevicesPower MosfetsSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesSilicon Carbide Power Electronics
In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.