Power Device Simulation is a computational modeling approach within semiconductor device simulation that specifically focuses on the behavior, performance, and reliability of high-voltage and high-current electronic devices under operational stress conditions.
736
Publications
24.8K
Citations
2.1K
Authors
574
Institutions
Publications per year
2017–2026
143
Parents
Publications
736
1–5 of 736
Authors
2.1K
- PP
16
h-index
- ES
16
h-index
- JH
14
h-index
- ARAllen R. Hefner
National Institute of Standards and Technology, United States
13 publications · 824 citations
12
h-index
- PM
11
h-index
1–5 of 2.1K
Institutions
574
University of Cambridge
Cambridge, United Kingdom
20 h-index
77 publications
2.9K citations
University of South Carolina
Columbia, United States
17 h-index
68 publications
3.1K citations
Centre National de la Recherche Scientifique
Paris, France
15 h-index
93 publications
2.5K citations
ABB (Switzerland)
Zurich, Switzerland
14 h-index
32 publications
1.1K citations
Aalborg University
Aalborg, Denmark
14 h-index
50 publications
2.3K citations
National Institute of Standards and Technology
Gaithersburg, United States
12 h-index
26 publications
1.3K citations
Infineon Technologies (Germany)
Munich, Germany
12 h-index
28 publications
826 citations
North Carolina State University
Raleigh, United States
12 h-index
43 publications
1.4K citations
1–8 of 574
Venues
- IEEE Transactions on Power Electronics
47 publications · 2.7K citations
32
h-index
- IEEE Transactions on Electron Devices
41 publications · 1.7K citations
25
h-index
- IEEE Transactions on Industry Applications
18 publications · 999 citations
17
h-index
- Microelectronics Reliability
18 publications · 486 citations
14
h-index
- IEEE Transactions on Industrial Electronics
15 publications · 649 citations
14
h-index
1–5