Device Simulation
Device Simulation is a computational modeling methodology within microelectronics that predicts the electrical behavior of semiconductor devices by solving fundamental physical equations under specified boundary conditions.
24.1K
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942.9K
Citations
52.3K
Authors
5.2K
Institutions
Publications per year
2017–2026
4.4K
Variants
TcadTechnology Computer-aided Design
Parents
Children
Bipolar Junction Transistor SimulationBreakdown SimulationCarrier Transport ModelingCompact ModelingComplementary Metal-oxide-semiconductor SimulationDevice CalibrationDrift-diffusion SimulationElectrothermal SimulationField-effect Transistor SimulationFinite Difference Time Domain Simulation
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University of California, Berkeley
Berkeley, United States
83 h-index
1.3K publications
83.6K citations
IBM (United States)
Armonk, United States
74 h-index
860 publications
48.8K citations
Purdue University West Lafayette
West Lafayette, United States
72 h-index
862 publications
58.4K citations
Massachusetts Institute of Technology
Cambridge, United States
69 h-index
696 publications
49.8K citations
Stanford University
Stanford, United States
66 h-index
708 publications
45.3K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
64 h-index
531 publications
35K citations
University of Illinois Urbana-Champaign
Urbana, United States
64 h-index
695 publications
32.7K citations

Centre National de la Recherche Scientifique
Paris, France
63 h-index
2K publications
69.8K citations
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