Bipolar Junction Transistor Simulation

Bipolar Junction Transistor Simulation is a computational modeling methodology within semiconductor device simulation that specifically describes the electrical behavior and operational characteristics of bipolar junction transistors through numerical solutions of coupled transport equations under varying physical and environmental conditions.

446

Publications

14.1K

Citations

1.3K

Authors

372

Institutions

Publications per year

2017–2026

37

Authors

1.3K

  1. MS
    M. Schröter

    Technische Universität Dresden, Germany

    13 publications · 681 citations

    12

    h-index

  2. MJ
    M. Jagadesh Kumar

    Indian Institute of Technology Delhi, India

    12 publications · 517 citations

    11

    h-index

  3. JF
    J.G. Fossum

    University of Florida, United States

    10 publications · 547 citations

    10

    h-index

  4. RD
    Ronald D. Schrimpf

    Vanderbilt University, United States

    9 publications · 238 citations

    9

    h-index

  5. JD
    John D. Cressler

    Georgia Institute of Technology, United States

    8 publications · 153 citations

    8

    h-index

1–5 of 1.3K

Venues

  1. IEEE Transactions on Electron Devices

    132 publications · 4.6K citations

    37

    h-index

  2. IEEE Transactions on Nuclear Science

    26 publications · 744 citations

    18

    h-index

  3. Solid-State Electronics

    35 publications · 788 citations

    17

    h-index

  4. IEEE Journal of Solid-State Circuits

    17 publications · 879 citations

    17

    h-index

  5. IEEE Electron Device Letters

    14 publications · 475 citations

    13

    h-index

1–5