Bipolar Junction Transistor Simulation
Bipolar Junction Transistor Simulation is a computational modeling methodology within semiconductor device simulation that specifically describes the electrical behavior and operational characteristics of bipolar junction transistors through numerical solutions of coupled transport equations under varying physical and environmental conditions.
446
Publications
14.1K
Citations
1.3K
Authors
372
Institutions
Publications per year
2017–2026
37
Parents
446
Modeling the bipolar transistor
Mathematics and Computers in Simulation · 1981 · 568 citations
Engineering, Electrical Engineering, Electronic Materials +11
VBIC95, the vertical bipolar inter-company model
Colin C. McAndrew, J.A. Seitchik, Derek F. Bowers et al. · IEEE Journal of Solid-State Circuits · 1996 · 238 citations
VLSI Process modeling—SUPREM III
Chu Po Ho, J.D. Plummer, Stephen Hansen et al. · IEEE Transactions on Electron Devices · 1983 · 230 citations
Engineering, Computer Engineering, Electrical Engineering +17
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372
IBM (United States)
Armonk, United States
19 h-index
60 publications
2.7K citations
University of Florida
Gainesville, United States
14 h-index
61 publications
2.1K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
12 h-index
26 publications
685 citations

University of Waterloo
Waterloo, Canada
11 h-index
23 publications
703 citations
Indian Institute of Technology Delhi
New Delhi, India
10 h-index
23 publications
1K citations
AT&T (United States)
Bedminster, United States
10 h-index
23 publications
869 citations
Philips (Netherlands)
Amsterdam, The Netherlands
10 h-index
23 publications
515 citations

Centre National de la Recherche Scientifique
Paris, France
9 h-index
27 publications
794 citations
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132 publications · 4.6K citations
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26 publications · 744 citations
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35 publications · 788 citations
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17 publications · 879 citations
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14 publications · 475 citations
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