J.D. Plummer

Point defects and dopant diffusion in silicon

P. Fahey, Peter B. Griffin, J.D. Plummer · Reviews of Modern Physics · 1989 · 1.4K citations

Electrical Engineering, Point Defects, Engineering +14

Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

Shiyu Sun, J.D. Plummer · IEEE Transactions on Electron Devices · 1980 · 683 citations

Engineering, Carrier Surface Mobilities, Electron Mobility +17

Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's

C. Auth, J.D. Plummer · IEEE Electron Device Letters · 1997 · 558 citations

Device Modeling, Electrical Engineering, Cylindrical Device +9

I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q

Peter B. Griffin, J.D. Plummer · 2003 · 354 citations

Low-power Electronics, Subthreshold Slope, Electrical Engineering +13

Thermal Oxidation of Silicon in Dry Oxygen Growth‐Rate Enhancement in the Thin Regime: I . Experimental Results

Hisham Z. Massoud, J.D. Plummer, E. A. Irene · Journal of The Electrochemical Society · 1985 · 313 citations

Materials Science, Experimental Results, Engineering +13