J.D. Plummer - Concepedia

Author

J.D. Plummer

Also Known As

J D Plummer, J Plummer, J. D. PLUMMER, J. D. Plummer, J. Plummer, J.D Plummer, J.D. Plummer, James D Plummer, James D. Plummer, James Plummer

366

Publications

13.4K

Citations

H-Index

141

Concepts

All Affiliations

Stanford University Stanford SystemX Alliance Integrated Systems Solutions (United States)

About

J.D. Plummer is an author at Stanford University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	53	172	11.5K
2	Applied Physics	48	142	10.5K
3	Natural Sciences	6	6	459
4	Education	3	3	147
5	Health Sciences	3	3	113

J.D. Plummer

185

Publications

12K

Citations

H-Index

Page 1

	Year	Citations
Point defects and dopant diffusion in silicon P. Fahey, Peter B. Griffin, J.D. Plummer Reviews of Modern Physics Electrical EngineeringPoint DefectsEngineeringPhysicsDiffusion Resistance	1989	1.4K
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces Shiyu Sun, J.D. Plummer IEEE Transactions on Electron Devices EngineeringCarrier Surface MobilitiesElectron MobilitySilicon On InsulatorAccumulation Layers	1980	683
Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's C. Auth, J.D. Plummer IEEE Electron Device Letters Device ModelingElectrical EngineeringCylindrical DeviceEngineeringSurrounding-gate Mosfet	1997	558
I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q Peter B. Griffin, J.D. Plummer Low-power ElectronicsSubthreshold SlopeElectrical EngineeringEngineeringPhysics	2003	354
Thermal Oxidation of Silicon in Dry Oxygen Growth‐Rate Enhancement in the Thin Regime: I . Experimental Results Hisham Z. Massoud, J.D. Plummer, E. A. Irene Journal of The Electrochemical Society Materials ScienceExperimental ResultsEngineeringOxidation ResistanceThin Regime	1985	313
Impact Ionization MOS (I-MOS)—Part I: Device and Circuit Simulations Peter B. Griffin, J.D. Plummer IEEE Transactions on Electron Devices Low-power ElectronicsDevice ModelingElectrical EngineeringImpact Ionization MosEngineering	2004	307
Chemistry of Si-SiO2 interface trap annealing Michael L. Reed, J.D. Plummer Journal of Applied Physics Materials ScienceSemiconductorsChemical EngineeringEngineeringSi-sio2 Interface Trap	1988	292
Activation and diffusion studies of ion-implanted p and n dopants in germanium Chi On Chui, Kailash Gopalakrishnan, Peter B. Griffin, Applied Physics Letters EngineeringOptoelectronic DevicesSemiconductor DeviceIon ImplantationElectronic Devices	2003	279
VLSI Process modeling&#8212;SUPREM III Chu Po Ho, J.D. Plummer, Stephen Hansen, IEEE Transactions on Electron Devices	1983	229
High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates Yaocheng Liu, Michael Deal, J.D. Plummer Applied Physics Letters EngineeringGe CrystalsSilicon On InsulatorSemiconductor DeviceLpe Ge Films	2004	196

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