P. Fahey

Point defects and dopant diffusion in silicon

P. Fahey, Peter B. Griffin, J.D. Plummer · Reviews of Modern Physics · 1989 · 1.4K citations

Natural Sciences, Materials Science, Physics +17

Kinetics of thermal nitridation processes in the study of dopant diffusion mechanisms in silicon

P. Fahey, G.P. Barbuscia, Masoud Moslehi et al. · Applied Physics Letters · 1985 · 155 citations

Engineering, Materials Engineering, Materials Science +17

On models of phosphorus diffusion in silicon

S. M. Hu, P. Fahey, R.W. Dutton · Journal of Applied Physics · 1983 · 132 citations

Engineering, Materials Engineering, Materials Science +15

Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in Si

P. Fahey, Swaminathan P. Iyer, G. Scilla · Applied Physics Letters · 1989 · 99 citations

Natural Sciences, Materials Science, Physics +17

Supersaturation of self-interstitials and undersaturation of vacancies during phosphorus diffusion in silicon

P. Fahey, R.W. Dutton, S. M. Hu · Applied Physics Letters · 1984 · 86 citations

Engineering, Materials Engineering, Materials Science +17