P. Fahey

Point defects and dopant diffusion in silicon

P. Fahey, Peter B. Griffin, J.D. Plummer · Reviews of Modern Physics · 1989 · 1.4K citations

Electrical Engineering, Point Defects, Engineering +14

Kinetics of thermal nitridation processes in the study of dopant diffusion mechanisms in silicon

P. Fahey, G.P. Barbuscia, Masoud Moslehi et al. · Applied Physics Letters · 1985 · 155 citations

Engineering, Thermal Nitridation, Silicon On Insulator +18

On models of phosphorus diffusion in silicon

S. M. Hu, P. Fahey, R.W. Dutton · Journal of Applied Physics · 1983 · 132 citations

Engineering, Consistent Model, Physics +12

Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in Si

P. Fahey, Swaminathan P. Iyer, G. Scilla · Applied Physics Letters · 1989 · 99 citations

Materials Science, Semiconductors, Semiconductor Technology +14

Supersaturation of self-interstitials and undersaturation of vacancies during phosphorus diffusion in silicon

P. Fahey, R.W. Dutton, S. M. Hu · Applied Physics Letters · 1984 · 86 citations

Materials Science, Materials Engineering, Vacancy Undersaturation +14