Point defects and dopant diffusion in silicon

P. Fahey, Peter B. Griffin, J.D. Plummer

Reviews of Modern Physics

Electrical EngineeringPoint DefectsEngineeringPhysicsDiffusion Resistance +12

Kinetics of thermal nitridation processes in the study of dopant diffusion mechanisms in silicon

P. Fahey, G.P. Barbuscia, Masoud Moslehi, +1

Applied Physics Letters

EngineeringThermal NitridationSilicon On InsulatorSemiconductorsSilicon Surface +16

On models of phosphorus diffusion in silicon

S. M. Hu, P. Fahey, R.W. Dutton

Journal of Applied Physics

EngineeringConsistent ModelPhysicsDiffusion ResistanceIntrinsic Impurity +10

Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in Si

P. Fahey, Swaminathan P. Iyer, G. Scilla

Applied Physics Letters

Materials ScienceSemiconductorsSemiconductor TechnologyEngineeringExperimental Evidence +12

Supersaturation of self-interstitials and undersaturation of vacancies during phosphorus diffusion in silicon

P. Fahey, R.W. Dutton, S. M. Hu

Applied Physics Letters

Materials ScienceMaterials EngineeringVacancy UndersaturationPoint DefectsEngineering +12

Effect of thermal nitridation processes on boron and phosphorus diffusion in 〈100〉 silicon

P. Fahey, R.W. Dutton, Masoud Moslehi

Applied Physics Letters

Materials ScienceMaterials EngineeringBoron NitrideEngineeringDiffusion Resistance +12

Stress-induced dislocations in silicon integrated circuits

P. Fahey, Sebastian Mäder, S. R. Stiffler, +3

IBM Journal of Research and Development

EngineeringIntegrated CircuitsMechanics Of MaterialsNanoelectronicsTrench Capacitor +14

Measurement of silicon interstitial diffusivity

Peter B. Griffin, P. Fahey, J.D. Plummer, +1

Applied Physics Letters

Silicon Interstitial DiffusivityEngineeringPhysicsMeasurementSilicon Debugging +12

Novel diffusion phenomenon of dopants in silicon at low temperatures

M. Wittmer, P. Fahey, G. Scilla, +2

Physical Review Letters

Materials SciencePoint DefectsEngineeringPhysicsDiffusion Resistance +11

Investigation of point-defect generation in silicon during oxidation of a deposited WSi2 layer

P. Fahey, R.W. Dutton

Applied Physics Letters

EngineeringSilicon On InsulatorRefractory Metals Tasi2Deposited Wsi2 LayerNanoelectronics +15