G. Scilla - Concepedia

Author

G. Scilla

IBM Research - Thomas J. Watson Research Center

Also Known As

G. J. SCILLA, G. J. Scilla, G. SCILLA, G. Scilla, G.J. Scilla, Gerald J. Scilla, Gerald Scilla

Publications

2.7K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)

About

G. Scilla is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	46	2.3K
2	Applied Physics	25	44	2.2K
3	Natural Sciences	4	4	72
4	Medicine	1	1	20
5	Biochemistry	1	1	12

G. Scilla

Publications

2.6K

Citations

H-Index

Page 1

	Year	Citations
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors G.L. Patton, J.H. Comfort, B.S. Meyerson, IEEE Electron Device Letters Intrinsic Transit TimeElectrical EngineeringElectronic DevicesEmitter WidthHigh-speed Electronics	1990	480
Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy T. F. Kuech, M. A. Tischler, P.-J. Wang, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringSolid SolubilityEngineering	1988	180
Boron, phosphorus, and arsenic diffusion in TiSi2 P. Gas, V. R. Deline, F. M. d’Heurle, Journal of Applied Physics	1986	100
Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in Si P. Fahey, Swaminathan P. Iyer, G. Scilla Applied Physics Letters Materials ScienceSemiconductorsSemiconductor TechnologyEngineeringExperimental Evidence	1989	99
Hydrogen plasma induced defects in silicon S.J. Jeng, G. S. Oehrlein, G. Scilla Applied Physics Letters Electrical EngineeringIon ImplantationEngineeringPhysicsHydrogen Plasma	1988	95
Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 − y, TMG and AsH3 N.I. Buchan, T. F. Kuech, G. Scilla, Journal of Crystal Growth Materials EngineeringMaterials ScienceChyx4 − YEngineeringApplied Physics	1991	90
Graded-SiGe-base, poly-emitter heterojunction bipolar transistors G.L. Patton, D.L. Harame, J.M.C. Stork, IEEE Electron Device Letters SemiconductorsLow BiasElectrical EngineeringElectronic DevicesEngineering	1989	88
Processing of La1.8Sr0.2CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering Peter Madakson, J. J. Cuomo, D. S. Yee, Journal of Applied Physics Materials ScienceSuperconducting MaterialHigh Quality La1.8sr0.2cuo4EngineeringHigh-tc Superconductivity	1988	71
High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs T. J. de Lyon, N.I. Buchan, P. D. Kirchner, Applied Physics Letters Materials EngineeringSemiconductorsElectrical EngineeringChemical EngineeringEngineering	1991	67
Reaction of titanium with germanium and silicon-germanium alloys S.L. Delage, F. M. d’Heurle, G. Scilla Applied Physics Letters Materials ScienceMaterials EngineeringChemical EngineeringEngineeringPowder Metallurgy	1989	67

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