G. Scilla

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

G.L. Patton, J.H. Comfort, B.S. Meyerson et al. · IEEE Electron Device Letters · 1990 · 480 citations

Intrinsic Transit Time, Electrical Engineering, Electronic Devices +10

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

T. F. Kuech, M. A. Tischler, P.-J. Wang et al. · Applied Physics Letters · 1988 · 180 citations

Semiconductors, Materials Science, Electrical Engineering +10

Boron, phosphorus, and arsenic diffusion in TiSi2

P. Gas, V. R. Deline, F. M. d’Heurle et al. · Journal of Applied Physics · 1986 · 100 citations · Full text

Experimental evidence of both interstitial- and vacancy-assisted diffusion of Ge in Si

P. Fahey, Swaminathan P. Iyer, G. Scilla · Applied Physics Letters · 1989 · 99 citations

Materials Science, Semiconductors, Semiconductor Technology +14

Hydrogen plasma induced defects in silicon

S.J. Jeng, G. S. Oehrlein, G. Scilla · Applied Physics Letters · 1988 · 95 citations

Electrical Engineering, Ion Implantation, Engineering +14