Statistics
Publications
52
Citations
2.6K
H-Index
29
Active since
1976
Affiliations
G. Scilla is an author at IBM Research - Thomas J. Watson Research Center specializing in materials science, materials engineering, and semiconductor materials.
Publications per year
1976–2003
52
52
75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
G.L. Patton, J.H. Comfort, B.S. Meyerson et al. · IEEE Electron Device Letters · 1990 · 480 citations
Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy
T. F. Kuech, M. A. Tischler, P.-J. Wang et al. · Applied Physics Letters · 1988 · 180 citations
Boron, phosphorus, and arsenic diffusion in TiSi2
P. Gas, V. R. Deline, F. M. d’Heurle et al. · Journal of Applied Physics · 1986 · 100 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17
Hydrogen plasma induced defects in silicon
S.J. Jeng, G. S. Oehrlein, G. Scilla · Applied Physics Letters · 1988 · 95 citations
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