F. M. d’Heurle - Concepedia

Author

F. M. d’Heurle

IBM Research - Thomas J. Watson Research Center

Also Known As

F M d'Heurle, F. D'HEURLE, F. D'heurle, F. D’Heurle, F. M. D'HEURLE, F. M. D'Heurle, F. M. D'heurle, F. M. D’Heurle, F. M. D’heurle, F. M. d'Heurle

235

Publications

9.6K

Citations

H-Index

102

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)KTH Royal Institute of Technology University of North Carolina at Chapel Hill

About

F. M. d’Heurle is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	51	145	8K
2	Applied Physics	50	134	7.7K
3	Natural Sciences	12	13	1K
4	Education	1	1	11
5	Medicine	1	1	18

F. M. d’Heurle

152

Publications

8.7K

Citations

H-Index

Page 1

	Year	Citations
Towards implementation of a nickel silicide process for CMOS technologies C. Lavoie, F. M. d’Heurle, Christophe Detavernier, Microelectronic Engineering Electrical EngineeringEngineeringVlsi DesignNanoelectronicsApplied Physics	2003	404
Nucleation of a new phase from the interaction of two adjacent phases: Some silicides F. M. d’Heurle Journal of materials research/Pratt's guide to venture capital sources Crystal StructureAdjacent PhasesNuclear PhysicsPhysicsPhase Equilibrium	1988	395
Reduction of Electromigration in Aluminum Films by Copper Doping I. Ames, F. M. d’Heurle, R. E. Horstmann IBM Journal of Research and Development Aluminium NitrideEngineeringAluminum FilmsChemical DepositionAnodizing	1970	301
Note on the origin of intrinsic stresses in films deposited via evaporation and sputtering F. M. d’Heurle, J. M. E. Harper Thin Solid Films Materials ScienceMaterials EngineeringEngineeringPhysicsSurface Science	1989	290
Aluminum films deposited by rf sputtering F. M. d’Heurle Metallurgical Transactions Materials EngineeringMaterials ScienceEngineeringApplied PhysicsThin Films	1970	269
Formation of thin films of NiSi: Metastable structure, diffusion mechanisms in intermetallic compounds F. M. d’Heurle, C. S. Petersson, J. E. E. Baglin, Journal of Applied Physics Materials ScienceMaterials EngineeringMetastable StructureIntermetallic CompoundsCrystalline Defects	1984	250
Formation of thin films of CoSi2: Nucleation and diffusion mechanisms F. M. d’Heurle, C. S. Petersson Thin Solid Films Materials ScienceEngineeringSurface ScienceApplied PhysicsThin Film Process Technology	1985	211
The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and <i>p</i>-type silicon H. Norde, Jorge de Sousa Pires, F. M. d’Heurle, Applied Physics Letters EngineeringN-type SiliconSilicon On InsulatorBand GapSemiconductor Device	1981	163
Electromigration and failure in electronics: An introduction F. M. d’Heurle Proceedings of the IEEE Materials ScienceMaterials EngineeringElectrical EngineeringElectric Field AtomsEngineering	1971	162
The formation of silicides from thin films of some rare-earth metals J. E. E. Baglin, F. M. d’Heurle, C. S. Petersson Applied Physics Letters Materials ScienceRare Earth MineralEngineeringCrystalline DefectsSurface Science	1980	150

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