P. Gas - Concepedia

Author

P. Gas

Centre National de la Recherche Scientifique ORCID

Also Known As

Gas, P., P Gas, P. Gas, Piotr Gas

Publications

962

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Institute for Technical Physics and Materials Science Institut Fresnel Laboratoire de Météorologie Dynamique

About

P. Gas is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	17	675
2	Applied Physics	13	15	612
3	Chemistry	10	11	500
4	Natural Sciences	3	3	134
5	Chemical Engineering	1	1	53

P. Gas

Publications

911

Citations

H-Index

Page 1

	Year	Citations
Boron, phosphorus, and arsenic diffusion in TiSi2 P. Gas, V. R. Deline, F. M. d’Heurle, Journal of Applied Physics	1986	100
Lattice and grain boundary self-diffusion in Ni2Si: Comparison with thin-film formation J. C. Ciccariello, S. Poize, P. Gas Journal of Applied Physics EngineeringThin-film FormationSolid-state ChemistryChemistrySemiconductors	1990	99
The role of solute segregation in grain boundary diffusion J. Bernardini, P. Gas, E. D. Hondros, Proceedings of the Royal Society of London A Mathematical and Physical Sciences	1982	84
Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a Si substrate F. Nemouchi, D. Mangelinck, C. Bergman, Applied Physics Letters Si SubstrateEngineeringCrystal Growth TechnologySolid-state ChemistrySilicon On Insulator	2005	73
Effect of Co, Pt, and Au additions on the stability and epitaxy of NiSi2 films on (111)Si D. Mangelinck, P. Gas, J.M. Gay, Journal of Applied Physics EngineeringMetal NanoparticlesMetallic NanomaterialsChemistrySilicon On Insulator	1998	68
Simultaneous growth of Ni5Ge3 and NiGe by reaction of Ni film with Ge F. Nemouchi, D. Mangelinck, C. Bergman, Applied Physics Letters Materials EngineeringMaterials ScienceChemical EngineeringEngineeringNanotechnology	2006	53
Grain-boundary diffusion: Analysis of the C kinetic regime P. Gas, Dezső L. Beke, J. Bernardino Philosophical Magazine Letters	1992	52
Formation of intermediate phases, Ni3Si2 and Pt6Si5: Nucleation, identification, and resistivity P. Gas, F. M. d’Heurle, F. K. LeGoues, Journal of Applied Physics EngineeringTheoretical Inorganic ChemistrySolid-state ChemistryChemistryInorganic Material	1986	49
Formation of Ni silicide from Ni(Au) films on (111)Si D. Mangelinck, P. Gas, A. Grob, Journal of Applied Physics EngineeringCrystal Growth TechnologySolid-state ChemistryChemistryChemical Deposition	1996	49
A comparative study of nickel silicides and nickel germanides: Phase formation and kinetics F. Nemouchi, D. Mangelinck, János L. Lábár, Microelectronic Engineering Materials ScienceInorganic ChemistryEngineeringPhase EquilibriumComparative Study	2006	48

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