P. Gas

Boron, phosphorus, and arsenic diffusion in TiSi2

P. Gas, V. R. Deline, F. M. d’Heurle et al. · Journal of Applied Physics · 1986 · 100 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Lattice and grain boundary self-diffusion in Ni2Si: Comparison with thin-film formation

J. C. Ciccariello, S. Poize, P. Gas · Journal of Applied Physics · 1990 · 99 citations

Natural Sciences, Materials Science, Physics +16

The role of solute segregation in grain boundary diffusion

J. Bernardini, P. Gas, E. D. Hondros et al. · Proceedings of the Royal Society of London A Mathematical and Physical Sciences · 1982 · 87 citations

Natural Sciences, Materials Engineering, Materials Science +17

Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a Si substrate

F. Nemouchi, D. Mangelinck, C. Bergman et al. · Applied Physics Letters · 2005 · 74 citations

Natural Sciences, Materials Engineering, Materials Science +12

Effect of Co, Pt, and Au additions on the stability and epitaxy of NiSi2 films on (111)Si

D. Mangelinck, P. Gas, J.M. Gay et al. · Journal of Applied Physics · 1998 · 68 citations

Natural Sciences, Materials Engineering, Materials Science +12