G.L. Patton

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

G.L. Patton, J.H. Comfort, B.S. Meyerson et al. · IEEE Electron Device Letters · 1990 · 480 citations

Intrinsic Transit Time, Electrical Engineering, Electronic Devices +10

Heterojunction bipolar transistors using Si-Ge alloys

Subramanian S. Iyer, G.L. Patton, J.M.C. Stork et al. · IEEE Transactions on Electron Devices · 1989 · 396 citations

Materials Science, Materials Engineering, Electrical Engineering +13

Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

G.L. Patton, Subramanian S. Iyer, S.L. Delage et al. · IEEE Electron Device Letters · 1988 · 295 citations

Semiconductors, Homojunction Transistors, Electrical Engineering +12

Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors

G.L. Patton, J. C. Bravman, J.D. Plummer · IEEE Transactions on Electron Devices · 1986 · 150 citations

Device Modeling, Materials Engineering, Electrical Engineering +13

On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations

John D. Cressler, J.H. Comfort, E.F. Crabbé et al. · IEEE Transactions on Electron Devices · 1993 · 108 citations

Engineering, Vlsi Design, Si Base +16